Transition Metal Ion Implantation into Diamond‐Like Carbon Coatings: Development of a Base Material for Gas Sensing Applications

Markwitz, A.; Leveneur, Jérôme; Gupta, Prasanth; Suschke, Konrad; Futter, J.; Rondeau, Morgane

doi:10.1155/2015/706417

Cited by 21 publications

(12 citation statements)

References 29 publications

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“…The sensitivity and selectivity can be improved by producing composite materials or by doping with noble metals [5]. Recently, conductive diamond-like carbon (DLC) materials have attracted considerable attention as a gas sensor material for solid-state gas sensor applications [6,7], as they possess a unique combination of physical and chemical characteristics [8].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Gas-Sensor Chips Based on Silicon–Carbon Films Obtained by Electrochemical Deposition

et al. 2019

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In this study, we designed two types of gas-sensor chips with silicon–carbon film, doped with CuO, as the sensitive layer. The first type of gas-sensor chip consists of an Al2O3 substrate with a conductive chromium sublayer of ~10 nm thickness and 200 Ω/□ surface resistance, deposited by magnetron sputtering. The second type was fabricated via the electrochemical deposition of a silicon–carbon film onto a dielectric substrate with copper electrodes formed by photoelectrochemical etching. The gas sensors are sensitive to the presence of CO and CH4 impurities in the air at operating temperatures above 150 °C, and demonstrated p- (type-1) and n-type (type-2) conductivity. The type-1 gas sensor showed fast response and recovery time but low sensitivity, while the type-2 sensor was characterized by high sensitivity but longer response and recovery time. The silicon–carbon films were characterized by the presence of the hexagonal 6H SiC polytype with the impurities of the rhombohedral 15 R SiC phase. XRD analysis revealed the presence of a CuO phase.

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Section: Introductionmentioning

confidence: 99%

Fabrication of Gas-Sensor Chips Based on Silicon–Carbon Films Obtained by Electrochemical Deposition

et al. 2019

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“…Most of those limitations can be circumvented by a modification of the DLC film, that is, by the addition of one or more elements to the film [6]. Apart from a few light elements, for example, B [7], N [8], or F [9], mainly transition metals are added for this purpose [6,10].…”

Section: Introductionmentioning

confidence: 99%

Preparation of Metal-Containing Diamond-Like Carbon Films by Magnetron Sputtering and Plasma Source Ion Implantation and Their Properties

Flege

Hatada

Hanauer

et al. 2017

Advances in Materials Science and Engineering

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Metal-containing diamond-like carbon (Me-DLC) films were prepared by a combination of plasma source ion implantation (PSII) and reactive magnetron sputtering. Two metals were used that differ in their tendency to form carbide and possess a different sputter yield, that is, Cu with a relatively high sputter yield and Ti with a comparatively low one. The DLC film preparation was based on the hydrocarbon gas ethylene (C 2 H 4 ). The preparation technique is described and the parameters influencing the metal content within the film are discussed. Film properties that are changed by the metal addition, such as structure, electrical resistivity, and friction coefficient, were evaluated and compared with those of pure DLC films as well as with literature values for Me-DLC films prepared with a different hydrocarbon gas or containing other metals.

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“…DLC is well known for its superior mechanical properties and hence it is widely used by the coating industry [1]. Recent interest in this field is focused on widening the areas of applications of ion beam based DLC thin films [2][3][4][5][6][7]. In our previous work, we presented the results of low energy transition metal ion implantation into DLC films and their possible applications in gas sensors [2].…”

Section: Introductionmentioning

confidence: 99%

Ferromagnetism in a diamond-like carbon film after nickel implantation

Gupta

Williams

Markwitz

2017

IJNT

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Mass selective ion beam deposited diamond-like carbon (DLC) films were implanted with Ni + ions at 30 keV with a fluence of 3.6 × 10 16 atoms cm-2. The peak concentration of nickel in the implanted film was calculated to be 12.5% at an implantation depth of ~30 nm into the DLC film. Raman measurements showed that the integrated intensity of the D peak at ~1370 cm-1 divided by the G peak at ~1560 cm-1 increases after ion implantation, which indicates that the implanted films are more graphitic. The implanted film shows ferromagnetic order at room temperature. However the saturation moment of the implanted film increased significantly when the measurement temperature was lowered. This may suggest that implantation leads to a dilute ferromagnetic semiconductor although more research is required.

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Transition Metal Ion Implantation into Diamond‐Like Carbon Coatings: Development of a Base Material for Gas Sensing Applications

Cited by 21 publications

References 29 publications

Fabrication of Gas-Sensor Chips Based on Silicon–Carbon Films Obtained by Electrochemical Deposition

Fabrication of Gas-Sensor Chips Based on Silicon–Carbon Films Obtained by Electrochemical Deposition

Preparation of Metal-Containing Diamond-Like Carbon Films by Magnetron Sputtering and Plasma Source Ion Implantation and Their Properties

Ferromagnetism in a diamond-like carbon film after nickel implantation

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