Transition-metal-oxide based functional thin-film device using leakage-free electrolyte

Katase, Takayoshi; Ohta, Hiromichi

doi:10.2109/jcersj2.17098

Cited by 4 publications

(3 citation statements)

References 56 publications

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“…We finally show the switching properties of the realized multifunctional devices based on TMOs of vanadium dioxide (VO 2 ), tungsten trioxide (WO 3 ) and strontium cobaltite (SrCoO x ), using the water-incorporated gate insulator. Since the detailed operation mechanism for each device was summarized in the previous paper, 32) this review paper mainly focuses on the development of water-incorporated gate insulators and the switching property of TMO-based three-terminal TFTs.…”

Section: Introductionmentioning

confidence: 99%

Oxide-based optical, electrical and magnetic properties switching devices with water-incorporated gate insulator

Katase

Ohta

2019

Jpn. J. Appl. Phys.

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Optical, electrical and magnetic properties of transition metal oxides (TMOs) can be switched by their non-stoichiometry, i.e. oxygen excess/ deficiency and protonation. However, the switching classically needs high-temperature heating or electrochemistry in liquid electrolyte, which is unsuitable for device applications. To overcome these difficulties, we have developed thin films of water-incorporated 12CaO•7Al 2 O 3 nanoporous glass and NaTaO 3 nanopillar glass. By applying the films to water-incorporated solid gate insulators of three-terminal thin-film transistors (TFTs), the confined water works as a strong reductant (H + )/oxidant (OH − ) for the TMO channel, and their electro-optical and electromagnetic properties can be controlled by applying an electric field. Herein, we review our developed water-incorporated gate insulators and their application to threeterminal TFTs with TMOs of vanadium dioxide (VO 2 ), tungsten trioxide (WO 3 ) and strontium cobaltite (SrCoO x ). The present approach using a water-incorporated gate insulator provides a novel design concept to develop electrochemically switchable multifunctional devices based on TMOs operating at room temperature.

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Section: Introductionmentioning

confidence: 99%

Oxide-based optical, electrical and magnetic properties switching devices with water-incorporated gate insulator

Katase

Ohta

2019

Jpn. J. Appl. Phys.

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“…We first review the electronic property modulation of SrTiO 3 and VO 2 using CAN-gated TFTs, and then discuss their different operation mechanism based on the magnitude relationship between E CBM of TMOs and E H2 . Since the development of water-infiltrated CAN gate insulators and the TMO-based multi-functional devices using the CAN-gated TFT structures were reviewed in the previous papers [31][32][33], we herein show the device characteristics of the CAN-gated TFTs by comparing to those of TFTs with water-free gate insulator of a fully dense a-C12A7 film.…”

Section: Introductionmentioning

confidence: 99%

Surface charge accumulation and electrochemical protonation of transition metal oxides using water-infiltrated nanoporous glass

Katase¹,

Ohta²

2019

Semicond. Sci. Technol.

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Water, composed of two strong electro-chemically active agents of proton (H + ) and hydroxyl ion (OH -), is expected to be a strong reductant as well as oxidant for transition metal oxides (TMOs). We have investigated the applicability of water for the optical, electronic, and magnetic property modification of TMOs using three-terminal thin-film transistor (TFT) structure with water-infiltrated nanoporous glass of amorphous 12CaO•7Al 2 O 3 as the gate insulator. In this paper, we review the electronic property modulation of TMOs using our developed TFT structure with water-infiltrated nanoporous glass and discuss the different operation mechanism using the examples of SrTiO 3 single crystal and VO 2 epitaxial film as the TMO channels. Electronic properties of the TMOs can be modulated in two ways depending on the magnitude relationship between the energy level of conduction band minimum (E CBM ) of TMOs and hydrogen generation potential (E H2 ). When E CBM is higher than E H2 in the case of SrTiO 3, two-dimensional electron gas layer is formed at the TMO surface by the electrostatic charge accumulation and subsequent redox reaction. When E CBM is lower than E H2 in the case of VO 2 , protonation driven metal-insulator conversion of TMOs occurs by the penetration of H + into the bulk region. The former approach may accelerate the development of nanostructures of high performance thermoelectric materials and the latter is applicable for the development of electrochromic device with non-volatile operation.

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“…Energy-efficient water desalination relies on electrochemical storage of sodium ions from aqueous electrolytes in TMOs . Adding electrolyte as a gate insulator to thin-film transistor with TMO as an active channel results in electrochemically switchable functional devices . Electrodes in storage devices with TMO overlayers (RuO 2 , , MnO 2 , , and Fe 3 O 4 , ) in general play a role for storage device, e.g., batteries of various types, , pseudocapacitors, and supercapacitors. , The properties of these devices, in particular their redox characteristics, depend notably on the electrode material and its interaction with the electrolyte …”

Section: Introductionmentioning

confidence: 99%

Modeling the Effect of the Electrolyte on Standard Reduction Potentials of Polyoxometalates

Kremleva

Rösch

2018

J. Phys. Chem. C

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The electrochemistry of transition metal oxide systems is gaining much interest in the context of energy storage. Yet, predicting the redox behavior of such systems remains very challenging for computational chemistry. In this work, we examined instead a computational strategy for related nano-sized molecular transition metal polyoxoanions, as such polyoxometalates (POMs) can be treated at manageable computational costs. As an example, we addressed the effects of an aqueous electrolyte at the atomic scale for estimating the standard reduction potentials Mn(IV/III) and Mn(III/II) of the tri-Mn-substituted W-based Keggin ion. The electrolyte model involves explicitly solvated Li + counterions and accounts for the fluctuating aqueous medium, described in firstprinciples molecular dynamics simulations. After equilibration, the systems showed different local structures of the electrolyte around the POM, depending on the oxidation state of the Mn centers. These varying local structures affect the Mn reduction potentials differently for the redox couples under study. Hybrid DFT calculations yield rather accurate absolute redox potentials for Mn, in good agreement with experiment, i.e., within 0.1 eV. This is in strong contrast to analogous results from an implicit solvation model, where redox potentials were notably underestimated, whereas models with counterions added, but without explicit solvation, notably overestimated the redox potentials, by up to 1 eV. Only by taking into account the full atomistic structure of the multicomponent system, solute, and surrounding electrolyte is one able to estimate the electrochemical properties of nanostructured transition metal oxide systems with acceptable accuracy.

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Transition-metal-oxide based functional thin-film device using leakage-free electrolyte

Cited by 4 publications

References 56 publications

Oxide-based optical, electrical and magnetic properties switching devices with water-incorporated gate insulator

Oxide-based optical, electrical and magnetic properties switching devices with water-incorporated gate insulator

Surface charge accumulation and electrochemical protonation of transition metal oxides using water-infiltrated nanoporous glass

Modeling the Effect of the Electrolyte on Standard Reduction Potentials of Polyoxometalates

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