1982
DOI: 10.1016/0141-9382(82)90061-0
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Transition metal oxide electrochromic materials and displays: a review

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Cited by 185 publications
(87 citation statements)
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“…Studies on electrochromic devices began with inorganic compounds such as tungsten trioxide (WO 3 ) and iridium dioxide (IrO 2 ). [4] Because of the different colors observed with these compounds while switching among their different redox states, [5,6] organic materials (viologens, metallophtalocyanines, and conducting polymers) have recently received much attention for electrochromic applications. [7] Conducting polymers in particular have several advantages over inorganic compounds.…”
mentioning
confidence: 99%
“…Studies on electrochromic devices began with inorganic compounds such as tungsten trioxide (WO 3 ) and iridium dioxide (IrO 2 ). [4] Because of the different colors observed with these compounds while switching among their different redox states, [5,6] organic materials (viologens, metallophtalocyanines, and conducting polymers) have recently received much attention for electrochromic applications. [7] Conducting polymers in particular have several advantages over inorganic compounds.…”
mentioning
confidence: 99%
“…Therefore, we have considered the in-2 termediate case where [)/o~L is close to 1. Equation [2] enables a direct relation between the phase and D/~L 2 as shown in Fig. 12.…”
Section: Resultsmentioning
confidence: 99%
“…We have described previously a battery cell that employs a rechargeable bromine-bromide electrochemical couple in the 1-methyl-3-ethylimidazolium chloride-aluminum chloride low-temperature molten salt (2). Preliminary experiments show that the electrochemistry of the brominebromide couple is complex, possibly due to halide exchange in the chloroaluminate melt.…”
Section: University Of Colorado At Denver Denver Colorado 80204mentioning
confidence: 99%
“…These materials can function as flat panel video displays [54][55][56], energy efficient "smart" window coatings [57], optical recording media [58], and lithographic resist films [59,60]. Electrically conducting MoO^ (x < 2) have recently shown promise as diffusion barriers in VLSI contact metallization schemes [61].…”
Section: Contamination By C and Omentioning
confidence: 99%