Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well

Abstract

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Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes

“…On the other hand, carrier depletion was seen in the sample with 1000 Å-thick InGaAs. The carrier depletion is so drastic that it extends beyond the well region into the GaAs layers and is believed to be caused by lattice relaxation since 1000 Å is much larger than the reported critical thickness of between 200 and 300 Å determined from x-ray diffraction [10]. This lattice relaxation gives rise to step-like capacitance drops over frequency as can be seen in the capacitance-frequency (C-F) spectra at V in Fig.…”

“…This concentration allows us to penetrate the Schottky depletion edge to the InGaAs layer by applying reverse voltages. Details of growth were reported previously [10]. Schottky contacts were fabricated by evaporating Au with dot diameter of 1500 m. An HP4194 gain-phase analyzer was used to measure the capacitance-frequency (C-F) spectra.…”

“…L ATTICE relaxation [1], [2] in InGaAs/GaAs material system has been found to generate misfit dislocations [3]- [8] and give rise to carrier depletion [9], [10]. This carrier depletion is so drastic that it extends beyond the relaxed InGaAs layer to GaAs regions and generates a carrier-depletion region [10]. In order to characterize the relaxation-induced defects, a GaAs Schottky diode with a relaxed InGaAs layer is often used.…”