Transition temperature of anisotropic superconductors with kondo impurities

High-pressure freezeout of electrons onto metastable states of a Si donor, as well as the persistent photoconductivity method were used to tune the concentration of a two-dimensional electron gas nSDEG in a GaAsIAIGaAs heterostructure. This made the measurement of t h e temperature dependence of the ZOEG mobility possible in a wide range of nZDEG values, even though this was applied to only one sample. Consequently, it enabled the determination of various contributions to ZOEG mobility and in particular the separation of the acoustic phonon scattering from other scattering mechanisms. The above procedure leads to the determination of the deformation potential and points out its screening by free carriers. This screening is well described by the random phase approximation T h e resulting conduction band deformation potential was found to be 12.5 f 0.5 eV

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Transition temperature of anisotropic superconductors with kondo impurities

Cited by 4 publications

References 11 publications

Transition temperature of anisotropic superconductors with Kondo impurities: Square well model

Transition temperature of anisotropic superconductors with Kondo impurities: Square well model

Influence of kondo effect on the specific heat jump of anisotropic superconductors

Concentration dependent mobility of two-dimensional electron gas in GaAs/AlGaAs heterostructure

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