Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas

Osvald, J.; Vanko, G.; Chow, Lee; Chen, N. C.; Chang, Liann‐Be

doi:10.1016/j.microrel.2017.09.004

Cited by 2 publications

(1 citation statement)

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“…One of its characteristics is that its capacitance changes along with the applied bias voltage. This component has been widely studied and reported [9][10][11][12][13][14][15]. We have proposed GaN-based 2DEG MSM varactors as the anti-surge components connected in series between the antenna and the backend circuits, as shown in Figure 1 [16], and we have demonstrated that this design protects the back-end HEMT element from electrostatic discharge (ESD) [17].…”

Section: Introductionmentioning

confidence: 99%

Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and their Anti-Surge Application

et al. 2020

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The AlGaN/GaN materials with a wide band gap, high electron mobility, and high breakdown voltage are suitable for manufacturing high-power and high-frequency electronic devices. In this study, metal Schottky contact electrodes of different dimensions are prepared on AlGaN/GaN wafers to fabricate metal–semiconductor–metal (MSM) varactors. Voltage-dependent capacitance and breakdown voltages of the varactors are measured and studied. The corresponding breakdown mechanisms of varactors with different electrode gaps are proposed. Furthermore, an anti-surge application using GaN-based MSM varactors in a signal transmission module is demonstrated, and its surge suppression capability is shown. We believe that our study will be beneficial in developing surge protection circuits for RF applications.

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