Translation of the phase transition temperature in TlInS/sub 2/ crystals with cationic impurity doping

Sardarli, Arzu; Filanovsky, I.M.; Sardarli, R. M.; Самедов, О. А.; Sadigov, I. Sh.; Aslanov, A.I.

doi:10.1109/icmens.2003.1221995

Cited by 2 publications

(4 citation statements)

References 3 publications

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“…Araki and Sasahara's measurements show that the diffusivity of soda glasses change by at most 10% in the range of 250−800 K. Experimental measurements also show a change of 10% in the thermal diffusivity for the 298−348 K temperature range . Furthermore, in agreement with the results obtained by Ferrieu and Auvert 28 in the modeling of a similar system, it is shown that the temperature dependence of diffusivity does not change the resulting temperature profile significantly.…”

Section: Theoretical Formulationsupporting

confidence: 84%

“…The main variables involved in the formulation of the temperature field problem are, thus, the incident laser power, laser beam radius, scan speed, thermal conductivity, thermal diffusivity, optical absorption coefficient of the sample, and energy needed to break chemical bonds between the gold and sulfur atoms. The incident laser power, the incident laser radius on the surface of the sample, and the scan speed can be set by appropriate optical and mechanical adjustments; the absorption percentage was measured, and the thermal properties of the substrate glass are both taken from the manufacturer's data and also measured . The energy needed to break chemical Au−S bonds was found in the literature …”

Section: Theoretical Formulationmentioning

confidence: 99%

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Direct Patterning of Self-Assembled Monolayers on Gold Using a Laser Beam

et al. 2004

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The development of a methodology to manipulate surface properties of a self-assembled monolayer (SAM) of alkanethiol on a gold film using direct laser patterning is the objective of this paper. The present study demonstrates proof of the concept for the feasibility of laser patterning monolayers and outlines theoretical modeling of the process to predict the resulting feature size. This approach is unique in that it eliminates the need for photolithography, is noncontact, and can be extended to other systems such as SAMs on silicon wafers or potentially polymeric substrates. A homogeneous SAM made of 1-hexadecanethiol is formed on a 300-A sputtered film of gold (supported by a soda lime glass substrate). Localized regions are then desorbed by scanning the focal spot of a 488-nm continuous-wave argon ion laser beam under a nitrogen atmosphere. The desorption occurs as a result of a high substrate temperature produced by the moving laser beam with a Gaussian spatial profile at a constant speed of 200 microm/s. After completing the scans, the sample is dipped into a dilute solution of 16-mercaptohexadecanoic acid and a hydrophilic monolayer self-assembles along the previously irradiated regions. The resultant lines are viewed, and line widths are measured using both wetting with tridecane under a light microscope and scanning electron microscopy. Using the direct laser patterning method, we have produced straight line patterns with widths of 28-170 microm. A thermal model was constructed to predict the line width of the desorbed monolayer. The effect of the laser power, beam waist, and temperature dependence of the substrate conductivity on the theoretical predictions is considered. It is shown that the theoretical predictions are in good agreement with the experimental results, and, thus, the model can effectively be used to predict experimental results.

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Section: Theoretical Formulationsupporting

confidence: 84%

Section: Theoretical Formulationmentioning

confidence: 99%

Direct Patterning of Self-Assembled Monolayers on Gold Using a Laser Beam

et al. 2004

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“…Summarizing, we see that despite some discrepancies in the number of observed anomalies and in their positions in the temperature scale, the majority of the investigators agree that there are four anomalies in the temperature dependence of the various physical properties of TlInS 2 near the temperatures of 79,170,[194][195][196][197] In addition, we would like to mention very interesting recent works of Sardarly et al [209][210][211][212][213][214][215][216] who doped TlInS 2 crystals with ∼0.1 at.% Cr, Mn, Yb, Sm, Bi, Fe, Ge or La. The authors have shown that even slight deviations from stoichiometry have a significant effect on the dielectric properties of the ferroelectric TlInS 2 crystals.…”

Section: Ferroelectric Phase Transition and Incommensurate State In T...mentioning

confidence: 79%

“…The authors have shown that even slight deviations from stoichiometry have a significant effect on the dielectric properties of the ferroelectric TlInS 2 crystals. The most interesting effect [209][210][211][212][213][214] is that the layered semiconductor ferroelectric TlInS 2 , doped with Fe, Mn, Cr and Ge, exhibits a pronounced relaxor behavior that is accompanied by the occurrence of polar nano-regions (PNRs), or nanodomains. For example, doping of the TlInS 2 crystals with Ge yields a change in the temperature dependence of dielectric susceptibility: instead of the peak corresponding to the phase transition at 196 K, two broad peaks occur; here, the low temperature peak at 142 K corresponds to the transition from the relaxor (nanodomain) state to the ferroelectric state.…”

Section: Ferroelectric Phase Transition and Incommensurate State In T...mentioning

confidence: 99%

Electronic properties and phase transitions in low-dimensional semiconductors

Panich

2008

J. Phys.: Condens. Matter

141

127

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We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional semiconductors possessing chain or layered structure. They are of significant interest because of their highly anisotropic properties, semi- and photoconductivity, nonlinear effects in their I–V characteristics (including a region of negative differential resistance), switching and memory effects, second harmonic optical generation, relaxor behavior and potential applications for optoelectronic devices. We review the crystal structure of TlX and TlMX2 compounds, their transport properties under ambient conditions, experimental and theoretical studies of the electronic structure, transport properties and semiconductor–metal phase transitions under high pressure, and sequences of temperature-induced structural phase transitions with intermediate incommensurate states. The electronic nature of the ferroelectric phase transitions in the above-mentioned compounds, as well as relaxor behavior, nanodomains and possible occurrence of quantum dots in doped and irradiated crystals is discussed.

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Translation of the phase transition temperature in TlInS/sub 2/ crystals with cationic impurity doping

Cited by 2 publications

References 3 publications

Direct Patterning of Self-Assembled Monolayers on Gold Using a Laser Beam

Direct Patterning of Self-Assembled Monolayers on Gold Using a Laser Beam

Electronic properties and phase transitions in low-dimensional semiconductors

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