Transmission electron microscopy: A critical analytical tool for ULSI technology

Abstract

An overview of the capabilities and limitations of transmission electron microscopy (TEM) based analysis techniques in the context of the electronics industry is presented. The electron-beam/specimen interactions that enable morphological, crystallographic and compositional characterization with modem TEMs are briefly reviewed. Diffraction contrast, lattice and energy filtered imaging; energy dispersive x-ray spectrometry (EDS), and electron energy loss spectrometry (EELS) are reviewed and discussed. These techniques are illustrated through specific applications and case studies in the electronics industry. Particular emphasis is placed on sample preparation concerns, which represent a practical limitation to an expanded role for TEM as a critical analytical tool for ULSI technology.