Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Abstract

Triple crystal diffractometry, x-ray standing wave, and transmission electron microscopy investigation of shallow BF 2 implantation in Si J. Vac. Sci. Technol. B 20, 1436 (2002 Extended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800°C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar damage distribution were compared. The mass of the implanted ion influences the type of defect observed. For all three implant species, rod-like ͕311͖ planar defects were observed. Additionally, in Ge and Sn implanted samples, small ͕111͖ interstitial faulted dislocation loops were observed.

Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon

“…This imaging condition was used to survey the defect density but detailed Burgers vector determination of the RLDs were not carried out within the scope of this work. The inclination of the defect lines with respect to the TEM foil (as observed by a dotted contrast) 16 is also taken into account when determining the size of the defect. Figure 1 shows the PL spectra measured at 13 K from the Si-implanted samples isothermally annealed at 700 • C for different time periods from 10 to 90 minutes.…”

Exploring SiSn as a performance enhancing semiconductor: A theoretical and experimental approach

“…Further, implantation of Sn can also be considered as a viable option for obtaining SiSn. 30,31 Thus, higher mobility SiSn p-channel MOSFETs can be seamlessly integrated in the current CMOS baseline by introducing one additional module.…”

Nanoscale morphology and photoemission of arsenic implanted germanium films

“…18 Rodlike extended defects with an average length of 100 nm were found for lowdose implantation of silicon by Si, Ge, or Sn ions. 19 Moreover, swelling was observed in self-implanted Si originated by vacancy clusters and nanovoids. 20 .…”