Transmission-ion-channeling studies of the silicon (111) monohydride surface

Abstract

Transmission ion channeling was used to examine the atomic position of deuterium on the silicon ͑111͒ monohydride surface. A 2-MeV 4 He ϩ -ion beam was used to elastically recoil deuterium from the beam-exit surface of a thin silicon crystal. The yield of recoiled deuterium was measured versus angle between the analysis beam and the channeling axis near the ͗111͘, ͗110͘, and ͗100͘ axes. The location of the surface deuterium relative to the silicon lattice was examined by comparing the measured yields with computer simulations of ion channeling. Channeling measurements were consistent with approximately half of the deuterium occupying a site close to the site predicted by ab initio calculations of the structure for the Si͑111͒ 1ϫ1 monohydride surface, with the remaining deuterium being disordered or displaced from the predicted site.

Photoelectron spectroscopy of SinH− (n=2–4) anions

“…[7][8][9] This differs from the single Si-H bonds favored in the bonding of hydrogen to extended silicon surfaces. [10][11][12][13][14][15] The calculations also predict that the silicon core structures differ only slightly from the bare silicon clusters in these small silicon monohydride systems. However, the two studies 8,9 of Si 2 H do not agree on the neutral ground state assignment.…”

Localized subsurface modification of materials using micro-low-energy multiple ion beamlets

“…The interaction of low energy ion beams with matter is quite different from that of high energy ion beams. High energy ion beams are able to sputter, 4 channel, 5 deposit deep inside, and backscatter from substrates 6 etc because of its higher range inside the materials, 7,8 patterning, and generation of internal subsurface excitations [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] etc. Since low energy ion beams cannot penetrate deep inside the substrate therefore its interaction is mainly limited to surface and sub-surface layers.…”