Transmission Lines on Low Resistivity Silicon Substrate for MMICs Applications

Six, G.; Vanmackelberg, M.; Happy, H.; Dambrine, G.; Boret, S.; Gloria, D.

doi:10.1109/euma.2001.338998

Cited by 10 publications

(5 citation statements)

References 7 publications

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“…Losses as low as 0.02 dB/mm at 25 GHz have been measured, which is about 40 percent lower as the losses reported in Happy et al (2000), Six et al (2001).…”

Section: Transmission Linesmentioning

confidence: 50%

High‐Q RF inductors on 20 Ω.cm silicon realized through wafer‐level packaging techniques

Carchon

Raedt²,

Beyne³

2003

Microelectronics International

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High Q on‐chip inductors and low loss on‐chip interconnects and transmission lines are an important roadblock for the further development of Si‐based technologies at RF and microwave frequencies. In this paper, inductors are realized on standard Si wafers (20 Ω.cm) using MCM‐D processing. This consists of realizing two low K dielectric layers (BCB) and a thick Cu interconnect layer. Inductors with 5 μm lines and spaces are demonstrated for a 5 μm thick Cu layer, hereby leading to a very compact and high performance inductors: Q‐factors in the range of 25 to 30 have been obtained for inductances in the range of 1 to 5 nH. It is also shown how the Q‐factor and resonance frequency vary as a function of the inductor layout parameters and the thickness of the BCB and Cu layers. The realized 50 Ω CPW lines (lateral dimension of 40 μm) have a measured loss of only 0.2 dB/mm at 25 GHz.

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“…Losses as low as 0.02 dB/mm at 25 GHz have been measured, which is about 40 percent lower as the losses reported in Happy et al (2000), Six et al (2001).…”

Section: Transmission Linesmentioning

confidence: 50%

High‐Q RF inductors on 20 Ω.cm silicon realized through wafer‐level packaging techniques

Carchon

Raedt²,

Beyne³

2003

Microelectronics International

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“…Other approaches of using redistributed metal above IC were also shown before [4], [8], [9]. We compared these approaches and ours in Table III. Other approaches use benzocyclobutene (BCB) as dielectric or Au wiring.…”

Section: Discussionmentioning

confidence: 99%

A structure of millimeter-wave on-chip transmission line using redistributed copper wire and ground shield

Kuramoto

Sakamoto

Namba

et al. 2012

2012 IEEE Radio Frequency Integrated Circuits Symposium

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This paper presents a structure of millimeterwave (mmW) on-chip transmission line using redistributed thick copper wires with ground shields. All the layers from standard BEOL layers to the aluminum pad layer can be selected as the ground shield. From electromagnetic field simulations and measurements up to 80 GHz, we prove that global-copper-wire ground shields produce minimum attenuation: less than 0.5 dB/mm at 60 GHz. This stands comparison with transmission lines on SOI substrate or goldwire transmission lines on GaAs semi-insulating substrate. An mmW silicon on-chip transmission line on a standard 40 nm CMOS process was fabricated successfully.

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“…5. The equivalent capacitance (C) results from the self resonance frequency (Fsr) knowledge with the following definition: LC 2π 1 Fsr = (4) Finally, R and r are adjusted to have a model response similar to measurements. Table II shows the lumped-element parameters extracted from measurements for the six examples of inductors presented previously.…”

Section: B Characterization and Modelingmentioning

confidence: 99%

“…To overcome this problem, several approaches have been used. Substrate losses have been reduced by fabricating the inductors on high resistivity silicon (ρ > 1 kΩ.cm) [1], by selective substrate micromachining [2] [3], by adding an insulating layer [4] or by suspending circuits above the integrated circuits [5].…”

Section: Introductionmentioning

confidence: 99%

On-Chip Spiral Inductors and Metal-Air-Metal Capacitors in Suspended Technology

Leblond

Blondy

Baillargeat

2006

2006 European Microwave Conference

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This paper presents a new suspended technology applied to the design of novel spiral inductors on silicon substrate and metal-air-metal capacitors. The RF characteristics of the fabricated inductors have been measured. We have achieved a high Q factor of 27 with an inductance of 3.7 nH. Equivalent circuit parameters have been extracted using a conventional lumped-element model. We demonstrate that the process can also be applied to metal-air-metal capacitor. This technology is CMOScompatible and the elements can be used to design filters at low gigahertz frequencies.

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Transmission Lines on Low Resistivity Silicon Substrate for MMICs Applications

Cited by 10 publications

References 7 publications

High‐Q RF inductors on 20 Ω.cm silicon realized through wafer‐level packaging techniques

High‐Q RF inductors on 20 Ω.cm silicon realized through wafer‐level packaging techniques

A structure of millimeter-wave on-chip transmission line using redistributed copper wire and ground shield

On-Chip Spiral Inductors and Metal-Air-Metal Capacitors in Suspended Technology

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