Transmission of Low-Energy Electrons through Polycrystalline LiF Films

Gołek, F.; Sobolewski, W.J.

doi:10.1002/(sici)1521-3951(199912)216:2<r1::aid-pssb99991>3.0.co;2-h

Cited by 7 publications

(3 citation statements)

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“…It is worth mentioning that before studying the adsorption of the aluminium oxide, we performed work-function measurements of the adsorption of many metallic adsorbates (namely, all of the first-row transition metals (Sc to Cu), rare-earth metals (La to Eu), Al, Ba and also B), and in none of these cases did we observed such a change of the C-V curve: in all the cases at all adsorbate coverages studied, the saturation level (the 'bc' part) remained at about the same level. Quite recently, a change of the shape of the C-V curves similar to that shown in figure 2 was also observed during the growth of LiF film, a highly insulating material (band gap: 14 eV), on the Si(111) surface [17]. Therefore we tend to attribute the decrease of the current through the oxide/metal sample as due to the insulating properties of the film.…”

supporting

confidence: 58%

Aluminium oxide ultrathin-film growth on the Mo(110) surface: a work-function study

Магкоев

Vladimirov

2001

J. Phys.: Condens. Matter

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Submonolayer-to-multilayer films deposited onto the surface of Mo(110) crystal by thermal evaporation of bulk aluminium oxide in ultrahigh vacuum have been studied by Auger electron spectroscopy, low-energy electron diffraction and work-function measurements (the Anderson method). The Auger spectra of the films at all coverages studied are composed of the lines characteristic for the bulk oxide; no evidence of a metallic Al signal is found. The layer-by-layer growth mode occurs up to two monolayers. Increase of the reflectivity of the low-energy electrons (1 to 4 eV) as the film grows indicates that the film has a reduced density of states, which probably resembles the band gap of the bulk alumina. The films deposited on a substrate held at room temperature are amorphous, whereas deposition at 1300 K results in a hexagonal superstructure.

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supporting

confidence: 58%

Aluminium oxide ultrathin-film growth on the Mo(110) surface: a work-function study

Магкоев

Vladimirov

2001

J. Phys.: Condens. Matter

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“…For example, in Ref. [23] the total current from the LiF films was measured lower than the threshold of electron-stimulated desorption (up to 12 eV). Figure 2 illustrates the total current spectra of the LiF films of 17 monolayer in thickness.…”

Section: Tc Spectrum Registration Every 1 Min For 30-40 Minmentioning

confidence: 99%

“…Also in Refs. [1,[20][21][22][23] it is shown that the changes in the intensity of the TC spectra can show defect formation when the whole spectrum of total current is shifted, and also the work function changes, as well as bending of the energy zones takes place, islands are formed, and changes in the surface potential are defined by doubling of the primary peak.…”

Section: Tc Spectrum Registration Every 1 Min For 30-40 Minmentioning

confidence: 99%

Mechanism of Aggregation Colloid Centers on Surface Ionic Crystals

Sharopov¹,

Atabaev²,

Djabbarganov³

et al. 2016

Advances in Colloid Science

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In this chapter, we analyze the kinetics of changes in the intensities of peaks of these aggregate defects as a function of the substrate temperature, as well as study the degradation of these aggregate F centers in order to understand the mechanisms of their formation and transformation to other types of defects, to colloids. The results obtained using methods of total current (TC) spectroscopy and secondary-ion mass spectroscopy (SIMS) under ion bombardment of LiF crystals are analyzed. The temperature dependence of the generation kinetics of F centers and their aggregates in a LiF/Si(1 1 1) thin-film system after irradiation with low-energy (80 eV) electrons was studied by TC spectroscopy. It was shown that, in all cases, low-temperature annealing results in the degradation of the formed centers followed by their coalescence. By SIMS, it is shown that the majority of the products of crystal sputtering contain point defects. A procedure for determining defects in sputtered clusters of ionic crystals is developed.

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