Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition

Zhao, Dan; Sathasivam, Sanjayan; Wang, Mingyue; Carmalt, Claire J.

doi:10.1039/d2ra05895b

Cited by 9 publications

(2 citation statements)

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“…B-doped ZnO (BZO) finds applications in photovoltaics, sensors, and photocatalysis. Various deposition techniques exist, with hydrothermal and aerosol-assisted chemical vapor deposition (AA-CVD) methods successfully incorporating boron into the ZnO lattice and improving its characteristics [24,25].…”

Section: Introductionmentioning

confidence: 99%

Effect of boron-doping and annealing on the structure, morphological and optical properties of ZnO films prepared by spray pyrolysis method

Al-Qadasy,

Al-Arique,

Kaawash

et al. 2024

Phys. Scr.

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Investigations have been conducted into the structure, morphology, thickness, and optical properties of ZnO thin film upon doping it with Boron from boric acid (H3BO3) at a constant concentration and annealing it at various temperatures (200, 300, and 400 °C). The thin films were formed on glass substrates using the spray pyrolysis process at 250°C, and they were then annealed for two hours in air at various temperatures. It was discovered that the annealing temperature and boron doping had a substantial impact on all properties of the ZnO nanostructure. The polycrystalline hexagonal wurtzite structure is present in both ZnO and BZO thin films. With high optical transmission (≥70%), crystallite diameters of 25.8 to 28.5 nm for ZnO and 15.96 to 24.80 nm for BZO, respectively, and significant absorbance up to 400 nm at the maximum annealing temperature (400 °C) for both films. Moreover, the as-deposited and annealed BZO films had optical band gaps of 3.04 eV and 2.9 eV, respectively, which are less than the ZnO film's 3.23 eV band gap; in general, as the annealing temperature increased it decreased.

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Section: Introductionmentioning

confidence: 99%

Effect of boron-doping and annealing on the structure, morphological and optical properties of ZnO films prepared by spray pyrolysis method

Al-Qadasy,

Al-Arique,

Kaawash

et al. 2024

Phys. Scr.

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“…Notwithstanding, the investigations on the undoped ZnO have disclose the fact that tuning the features of undoped ZnO makes it eligible candidate for various applications (Kara et al, 2017). One of the effective strategies is the incorporation of dopant elements, especially trivalent cations such as Al, In, B, and Ga, into the structure of undoped ZnO (Shukla et al, 2006;Zhao et al, 2022). Among the trivalent cations, boron could effectively modify the features of ZnO TFs because of its lowest ionic radius and greatest electronegativity (Tsay & Hsu, 2013).…”

Section: Introductionmentioning

confidence: 99%

Systematic Investigation on the Synergistic Impact of Gallium (Ga)-Boron (B) Co-Doping on the Features of ZnO Films

ÖZEL,

ATILGAN

2023

Gazi University Journal of Science Part A: Engineering and Innovation

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Herein, gallium and boron co-doped ZnO thin films of varying percentages of Ga and B doping content were successfully deposited on glass substrates via spin coating method. The impact of doping content on structural, morphological, optical, and electrical features of co-doped ZnO films was systematically probed in this work. The characterization results demonstrate that the doping content has a profound effect on the features of co-doped ZnO thin films. The X-ray diffraction patterns confirm the polycrystalline nature of the films with varying diffraction peak intensities. AFM images disclose the smooth surface of the films with low surface roughness. UV–Vis-NIR transmittance spectra reveal that the deposited films exhibit high transparency over 86 % in range of 400-800 nm wavelength with excellent optical properties. The electrical resistance measurements indicate that co-doped ZnO thin films having doping concentrations of 2.5 at. % of Ga and 0.5 at. % of B has the lower resistivity, and the resistivity of the samples are strongly affected by the doping content. The obtained knowledge from this study could be important for the fabrication of high-performance optoelectronic device based on ZnO thin films.

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Transparent Conductive Titanium and Fluorine Co‐doped Zinc Oxide Films

Ramzan,

Borowiec,

Parkin

et al. 2024

ChemPlusChem

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Aerosol‐assisted chemical vapor deposition (AACVD) was used to deposit highly transparent and conductive titanium or fluorine‐doped and titanium‐fluorine co‐doped ZnO thin films on glass substrate at 450 oC. All films were characterized by X‐ray photoelectron spectroscopy (XPS), X‐ray diffraction (XRD), UV‐Vis spectroscopy, scanning electron spectroscopy (SEM), and four‐point probe. The films were 600‐680 nm thick, crystalline, and highly transparent (80‐87%). The co‐doped film consisted of 0.70 at.% titanium and 1 at.% fluorine, and displayed a charger carrier mobility, charge carrier concentration, and a minimum resistivity of 8.4 cm2 V‐1 s‐1, 3.97 x 1020 cm‐3, and 1.69 x 10‐3 Ω cm, respectively. A band gap of 3.6 eV was observed for the co‐doped film. Compared to the undoped and singly doped films, the co‐doped film displayed a notably higher structure morphology (more homogenous grains with well‐defined boundaries) suitable for transparent conducting oxide applications.

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Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition

Abstract: Boron doped zinc oxide thin films via aerosol assisted chemical vapor deposition with resisitivities as low as 5.1 × 10−3 Ω cm.

Cited by 9 publications

References 50 publications

Effect of boron-doping and annealing on the structure, morphological and optical properties of ZnO films prepared by spray pyrolysis method

Effect of boron-doping and annealing on the structure, morphological and optical properties of ZnO films prepared by spray pyrolysis method

Systematic Investigation on the Synergistic Impact of Gallium (Ga)-Boron (B) Co-Doping on the Features of ZnO Films

Transparent Conductive Titanium and Fluorine Co‐doped Zinc Oxide Films

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