Transparent and Flexible In<sub>2</sub>O<sub>3</sub>Thin Film for Multilevel Nonvolatile Photomemory Programmed by Light

Abbas, Sohail; Kumar, Mohit; Ban, Dong‐Kyun; Yun, Ju-Hyung; Kim, Sangho

doi:10.1021/acsaelm.8b00139

Cited by 26 publications

(24 citation statements)

References 33 publications

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“…Levi et al [870] further developed the concept by investigating the biomimetic neuronal networks towards brain-morphic artificial intelligence. Implementation of lightstimulated synaptic emulators may greatly enhance computational speed by providing devices with high bandwidth, low power computation requirements, and low crosstalk [871] , [872] , [873] , [874] , [875] , [876] , [877] , [878] , [675] , [879] , [880] . Oxides also are an excellent platform for innovative photo-driven learning as several synaptic functionalities, such as tunable photoelectric STP/STD and LTP/LTD, may be emulated taking advantage of the inherent persistent photoconductivity and volatile resistive switching characteristics of the some oxide-based devices (Fig.…”

Section: Neural Codesmentioning

confidence: 99%

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Pérez‐Tomás

2019

Adv Materials Inter

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New device concepts and new computing principles are needed to balance our ever-growing appetite for data and information with the realization of the goals of increased energy efficiency, reduction in CO 2 emissions and the circular economy. Neuromorphic or synaptic electronics is an emerging field of research aiming to overcome the current computer's Von-Neumann bottleneck by building artificial neuronal systems to mimic the extremely energy efficient biological synapses. The introduction of photovoltaic and/or photonic aspects into these neuromorphic architectures will produce self-powered adaptive electronics but may also open up new possibilities in artificial neuroscience, artificial neural communications, sensing and machine learning which would enable, in turn, a new era for computational systems owing to the possibility of attaining high bandwidths with much reduced power consumption. This perspective is focused on recent progress in the implementation of functional oxide thinfilms into photovoltaic and neuromorphic applications towards the envisioned goal of selfpowered photovoltaic neuromorphic systems or a solar brain.

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Section: Neural Codesmentioning

confidence: 99%

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Pérez‐Tomás

2019

Adv Materials Inter

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“…AgNWs have been used as a top electrode material because of their high electrical conductivity, broadband optical transmittance, and figure of merit. [ 5,8,12,26,28,31 ] Here, AgNW electrodes were directly fabricated via spin‐coating on the ZnO/NiO heterostructure, as described in the experimental section. As shown in Figure a,b, the AgNW electrodes were prepared with two different diameters (Ø20 and Ø40 nm).…”

Section: Resultsmentioning

confidence: 99%

“…Their stacking in a heterostructure configuration leads to a host of intriguing physical, optical, and electrical phenomena. [ 1–4 ] Such heterostructures have been explored for advanced optoelectronic applications, such as ultraviolet (UV) sensors, [ 5–7 ] neuromorphic computing, [ 8,9 ] bio‐sensors, [ 10,11 ] photonic memory, [ 8,12 ] and transparent photovoltaics. [ 13–15 ] Numerous energy harvesting methods, including for chemical (bio‐fuel cells), thermal (thermoelectric), mechanical (triboelectric, electromagnetic, and piezoelectric), and light energy (photovoltaic cells), have been considered to meet our energy production requirements.…”

Section: Introductionmentioning

confidence: 99%

“…[ 21–24 ] Various heterostructures based on UV absorber layers, for example, ZnO, TiO 2 , In 2 O 3 , SnO 2 , ZnS, and Ga 2 O 3 have been explored for the UV reactive applications. [ 6,12,25–27 ] Transparent conducting electrodes in these devices are vital, however, transparent conducting electrode (TCE) nanomaterials have not been widely used to date to improve the performance of optoelectronic devices combined with transparent photovoltaics. Silver nanowires (AgNWs) as a TCE are extensively used in photoelectric devices because of their high optical transmittance, high surface to volume ratio, excellent electrical conductivity, flexibility, and lower processing cost.…”

Section: Introductionmentioning

confidence: 99%

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All‐Metal Oxide Transparent Photovoltaic for High‐Speed Binary UV Communication Window

Patel

Bhatnagar

Bist

et al. 2021

Adv Elect Materials

Self Cite

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Optoelectronic devices that are self‐powered and have a high transparency are of interest for application in versatile next‐generation “see‐through” platforms. However, current optoelectronic photodetectors often have drawbacks including a high driving power and a relatively slow response speed. In this work, large‐area transparent photovoltaic devices (TPVD) are reported that can be easily prepared at room temperature from eco‐friendly and abundant materials. The TPVD consists of a zinc oxide/nickel oxide heterostructure as the light‐harvester and ultraviolet (UV) blocker, and its photovoltaic performance is evaluated using silver nanowire (AgNW) electrodes composed of NWs with varying diameters. As a result of surface plasmons in the AgNW electrode, TPVDs with AgNWs that have a larger diameter exhibit enhanced transparency and photovoltaic performance, with a photovoltage of 520 mV under standard AM1.5 light illumination. Importantly, the binary electric signal produced can be decoded without the need for electronic filter circuits or a threshold. A UV communication system is further designed based on the TPVD for application as a self‐powered, binary Morse‐code signal with a high response speed. This work integrates the features of a transparent power generator and transparent optoelectronics into a UV photodetector, and it can enable the application of self‐reliant devices for communications, imaging, and sensors.

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“…The widespread application of optical fibers for optical signal transmission and the ongoing development of high‐speed optical computing have created a growing need for developing light‐writing memories . Compared to conventional electrically programmed memories, photomemory devices adopt the photon‐programming and store the light information instead, which is an essential block for optical data processing and photonic computation circuits .…”

Section: Introductionmentioning

confidence: 99%

Nonvolatile Rewritable Photomemory Arrays Based on Reversible Phase‐Change Perovskite for Optical Information Storage

Zou

Zheng

Chang

et al. 2019

Advanced Optical Materials

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devices combine both functions of photosensors and memories, and thus simplify the device structure by eliminating the demand for additional memory components to store the output of the photosensors. [5] Recently, metal halide perovskite has attracted much research interest due to its outstanding optoelectronic properties including exceptional optical absorption, high carrier mobility, and long carrier lifetime. [6,7] These characteristics have promoted its fast development in photosensing devices including photovoltaics, [8] photodetectors, [9][10][11] and phototransistors. [12] However, most of these perovskite photosensing devices only convert the light illumination to transient electrical signals, requiring another processing component to store the output signals for recording light information. More recently, perovskitebased photon-programmed memory was developed using the floating-gate transistor architecture. [13,14] However, these memory behaviors relied on the trapping of photoinduced charges in the perovskite surrounded by insulating polymer matrix, which could not last for a long time (1000 s). In this work, we utilized the photochromic all-inorganic perovskite CsPbIBr 2 to demonstrate a nonvolatile, rewritable, photon-programmed memory array for optical information storage.The photomemory (PM) pixel is composed of an Ag interdigitated electrode (IDE) and vapor-deposited perovskite film atop. The reversible phase transitions of vapor-deposited CsPbIBr 2 films between the perovskite (PVSK) phase and non-perovskite (non-PVSK) phase were achieved through laser heating/moisture exposure cycles. The two different phases correspond to significant distinctions in optoelectronic properties including photoluminescence (PL), optical absorption, refractive index, charge transport, etc. [15,16] Instead of heating all PM pixels together on a heater platform, a Nd:YVO 4 laser (λ = 1064 nm) was used to generate heat selectively in specific PM pixels through the photothermal effect in Ag, [17] which made the transition from the non-PVSK to PVSK phase site-selectable. The PM pixel in the PVSK phase showed a high responsivity up to 1.5 A W −1 with a broad absorption spectrum from 350 to 600 nm.The high transmission speed of optical signals and their application in optical computation have created a growing demand for photon-programmed memory devices. Rather than using electrical pulses to store data in one of two states, the photomemory (PM) devices exploit the optical stimulation to store the light information. In this work, the application of a nonvolatile rewritable PM array using the photochromic inorganic perovskite CsPbIBr 2 grown by a vapor-deposition process is demonstrated. Reversible phase transitions between orthorhombic (δ) and cubic (α) phases are achieved in CsPbIBr 2 films through laser-induced heat and moisture exposure. The PM pixels in an optically absorbing perovskite phase exhibit ≈50-fold photoresponsivity as large as those in a transparent-colored non-perovskite phase. Storing optical data are achi...

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Transparent and Flexible In₂O₃Thin Film for Multilevel Nonvolatile Photomemory Programmed by Light

Cited by 26 publications

References 33 publications

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

All‐Metal Oxide Transparent Photovoltaic for High‐Speed Binary UV Communication Window

Nonvolatile Rewritable Photomemory Arrays Based on Reversible Phase‐Change Perovskite for Optical Information Storage

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Transparent and Flexible In2O3Thin Film for Multilevel Nonvolatile Photomemory Programmed by Light

Cited by 26 publications

References 33 publications

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

All‐Metal Oxide Transparent Photovoltaic for High‐Speed Binary UV Communication Window

Nonvolatile Rewritable Photomemory Arrays Based on Reversible Phase‐Change Perovskite for Optical Information Storage

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Transparent and Flexible In₂O₃Thin Film for Multilevel Nonvolatile Photomemory Programmed by Light