Transparent and Reusable Nanostencil Lithography for Organic–Inorganic Hybrid Perovskite Nanodevices

Abstract

Organic-inorganic hybrid perovskites have attracted considerable attention for developing novel optoelectronic devices owing to their excellent photo responses. However, conventional nanolithography of hybrid perovskites remains a challenge because they undergo severe damage in standard lithographic solvents, which prohibits device miniaturization and integration. In this study, a novel transparent stencil nanolithography (tSL) technique is developed based on focused ion beam (FIB)assisted polyethylene terephtha late (PET) direct patterning. The proposed tSL enables ultrahigh lithography resolution down to 100 nm and accurate stencil mask alignment. Moreover, the stencil mask can be reused more than ten times, which is costeffective for device fabrication. By applying this lithographic technique to hybrid perovskites, a highperformance 2D hybrid perovskite heterostructure photodetector is fabricated. The responsivity and detectivity of the proposed heterostructure photodetector can reach up to 28.3 A W −1 and 1.5 × 10 13 Jones, respectively. This tSL nanolithography technique based on FIBassisted PET direct patterning can effectively support the miniaturization and integration of hybridperovskitebased electronic devices.

Tailoring optoelectronic performance through compositional engineering to optimize trap densities in Cs x MA(1− x) PbI3 perovskite nanowires

“…One-dimensional semiconductor nanowires (NWs) exhibit unique geometries and properties, establishing them as promising foundational elements in a range of nanoscale electronic and optoelectronic devices, including photodetectors, transistors, memory devices, photovoltaics, and nanogenerator [1][2][3][4][5][6]. Among the emerging materials in the realm of diverse optoelectronic devices, organic-inorganic lead halide perovskites, particularly methylammonium lead halide perovskite (MAPbX 3 , where X = Cl, Br, I), stand out due to their exceptional attributes, including an ultrahigh absorption coefficient, tunable band gap, high carrier mobility, and costeffective fabrication [7][8][9][10][11][12]. Notably, MAPbI 3 , a representative member of the MAPbX 3 family, boasts exceptional light-harvesting capabilities with an absorption coefficient as high as 10 5 cm −1 , surpassing existing optoelectronic materials [13].…”

“…Consequently, MAPbI 3 NWs have found applications in high-performance optoelectronic devices such as photodetectors [14,15], light-emitting diodes [9], and lasers [16,17]. For example, MAPbI 3 NW-based photodetectors have exhibited remarkable characteristics, including low dark current (⩽1 nA) [18] and high detectivity (⩾10 12 Jones) [19]. However, despite their excellent optoelectronic properties, the presence of a high trap densities remains a significant impediment to further enhancing device performance.…”

Surface Passivation to Enhance the Interfacial Pyro-Phototronic Effect for Self-Powered Photodetection Based on Perovskite Single Crystals

“…15,16 However, the fabrication of an optimal Schottky junction or heterojunction for self-powered photodetectors based on MHPs is a complex task due to the significant degradation of MHPs during a conventional lithographic procedure. 17 Hence, the operation of PDs typically necessitates the inclusion of a voltage bias. Various physical phenomena, such as the ferroelectric effect and piezophototronic effect, can independently or collectively influence the band structure modulation of a Schottky junction or heterojunction.…”

“…The single crystals (SCs) of MHPs exhibit significantly enhanced optical and electrical properties, as well as improved stability in comparison to their polycrystalline counterparts. Consequently, numerous high-performance PDs have been reported, which are based on MHP SCs. − The fabrication of self-powered PDs for MHP polycrystalline films can be achieved with relative ease by employing solar cell-like structures such as p–i–n junctions or pn junctions. , However, the fabrication of an optimal Schottky junction or heterojunction for self-powered photodetectors based on MHPs is a complex task due to the significant degradation of MHPs during a conventional lithographic procedure . Hence, the operation of PDs typically necessitates the inclusion of a voltage bias.…”