Transparent conducting oxide films for thin film silicon photovoltaics

Beyer, W.; Hüpkes, J.; Stiebig, Helmut

doi:10.1016/j.tsf.2007.08.110

Cited by 235 publications

(102 citation statements)

References 33 publications

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“…At the present time, AZO and B-doped ZnO (BZO) thin films are in practical use for transparent electrode applications in CuIn 1-X Ga X Se 2 -based thin-film solar cells [9][10][11][12]. In addition, impurity-doped ZnO thin films, such as AZO, GZO and BZO with a textured surface structure as well as a high transmittance in the near-infrared region, have recently attracted much attention for transparent electrode applications in Si-based thin-film solar cells [13][14][15][16][17][18][19][20][21][22][23][24]. It is necessary to form impurity-doped ZnO thin films with a doubly textured surface structure that can effectively scatter the incident visible and near-infrared light [25].…”

Section: Introductionmentioning

confidence: 99%

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

Minami

Miyata

Nomoto

2012

IOP Conf. Ser.: Mater. Sci. Eng.

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Section: Introductionmentioning

confidence: 99%

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

Minami

Miyata

Nomoto

2012

IOP Conf. Ser.: Mater. Sci. Eng.

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“…Besides high transmittance over visible range and high electrical conduction, the TCO thin films often should fulfill other functions. For example, if applied as a part of transparent counter electrode in a silicon solar cell, the TCO thin film should match the requirements for low reflection coefficient (antireflection (AR) coating) and good surface passivation [3]. High electron concentration observed in TCO thin films results in enhanced reflection in near infrared light range.…”

Section: Introductionmentioning

confidence: 99%

Investigations of electrical and optical properties of functional TCO thin films

Domaradzki

Kaczmarek

Drabczyk

et al. 2015

Materials Science-Poland

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Transparent conducting oxide (TCO) films of indium-tin-oxide were evaporated on the surface of silicon wafers after phosphorous diffusion and on the reference glass substrates. The influence of deposition process parameters (electron beam current, oxygen flow and the substrate temperature) on optical and electrical properties of evaporated thin films were investigated by means of resistivity measurements and optical spectrophotometry. The performance of prepared thin films was judged by calculated figure of merit and the best result was obtained for the sample deposited on the substrate heated to the 100 • C and then removed from the deposition chamber and annealed in an air for 5 minutes at 400 • C. Refractive index and extinction coefficient were evaluated based on measured transmission spectra and used for designing of antireflection coating for solar cell. The obtained results showed that prepared TCO thin films are promising as a part of counter electrode in crystalline silicon solar cell construction.

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“…4,5 Since thin-film Si cells are manufactured through sequential deposition of the cell layers on the cover glass plate coated with the transparent conductor, the texture of the conductor may (partially) replicate in the other cell layers, resulting in roughened interfaces between the different layers of the solar cell. 6 It has been reported that this roughness can lower the reflectivity at interfaces between different layers, resulting in a larger amount of photons that penetrate into the active layer. 7 Additionally, the roughness at the interface may lead to an increased path length of photons in the Si absorber layer, resulting in an increase of absorption.…”

Section: Introductionmentioning

confidence: 99%

Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

et al. 2014

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Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

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Transparent conducting oxide films for thin film silicon photovoltaics

Cited by 235 publications

References 33 publications

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

Investigations of electrical and optical properties of functional TCO thin films

Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

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