Transparent conducting properties of Mg and Al co-doped ZnO thin films deposited by spray pyrolysis technique

Karzazi, O.; Soussi, L.; Louardi, A.; Bachiri, A. El; Khaidar, Mohammed; Monkade, Mohamed; Erguig, H.; Taleb, M.

doi:10.1016/j.spmi.2018.03.011

Cited by 33 publications

(8 citation statements)

References 14 publications

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“…As a result, a trace amount of 1.2 at.%, Mg-doped AZO film had the lowest electrical resistivity of 7.9 × 10 −4 Ω•cm. Nevertheless, the resultant electrical resistivity in this study is still much lower than those of previously reported Mg-doped AZO films, electrical resistivities in a range of 1.55 × 10 −1 -1.00 × 10 −3 Ω•cm deposited using different approaches [2,20,[26][27][28], and comparable with the Mg-doped AZO films deposited using sputtering with ceramic targets [29]. Furthermore, the electrical properties of the films in this study are significantly superior to the films deposited on a c-plane sapphire substrate using Zn-Mg and Al targets [27].…”

Section: Electrical Properties Of the Mg-doped Azo Filmscontrasting

confidence: 67%

Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets

Yang

Jung

et al. 2020

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Bandgap enlarged Mg-doped aluminum zinc oxide (Mg-doped AZO) film is a potential transparent conducting oxide for applications in photonics devices. The oxide film normally deposited by sputtering, particularly using ceramic targets, while maintaining its pristine property for the film deposited using metallic targets is rarely addressed. This study investigated the optical and electrical properties of Mg-doped AZO films that were performed by a magnetron reactive co-sputtering method using metallic Mg and Al–Zn targets. Doping of Mg in the AZO significantly affects the electrical resistivity and optical transmission of the films because Mg tends to replace part of Zn lattice sites. The 1.2 at.% Mg-doped AZO film had an electrical resistivity of 7.9 × 10−4 Ω·cm, an optical transmittance of 92.6% in the visible light range, and a bandgap of 3.66 eV when the film was post-annealed at 600 °C. The Mg doping widens the bandgap and, thus, increases the transmittance of the AZO film. Because of the superior electrical and optical characteristics, the Mg-doped AZO films prepared using the metallic targets can be a reliable transparent conducting oxide for applications.

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Section: Electrical Properties Of the Mg-doped Azo Filmscontrasting

confidence: 67%

Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets

Yang

Jung

et al. 2020

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“…AZO thin films have been produced using the USP technique, and their performances were revealed as transparent conductive contacts in photovoltaic solar cells [27,[30][31][32][33][34][35][36]. In addition, its antireflection [30], photocatalytic [37], and photo-sensing [38] properties were reported.…”

Section: Introductionmentioning

confidence: 99%

Solution processed glass/fluorine-doped tin oxide/aluminum-doped zinc oxide double layer thin films for transparent heater and near-infrared reflecting applications

Tönbül

Can

Őztürk

et al. 2021

J Sol-Gel Sci Technol

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Double layer glass/fluorine-doped tin oxide (FTO)/aluminum-doped zinc oxide (AZO) multifunctional thin films were achieved via ultrasonic spray pyrolysis (USP) method without employing a post-deposition annealing. Transparent heater and near-infrared heat reflection behaviors were investigated. The samples were characterized in terms of their structural, morphological, optical, and electrical properties. The top AZO layer exhibited a polycrystalline structure without any preferred orientation. The double layer structure showed very high average transmittance (87%, 400-700 nm) in the visible and reflectance (55%, 2500 nm) in the near-infrared, regions. In addition, the sheet resistance and resistivity of the film were measured as 14.85 (Ω sq −1 ) and 1.78 × 10 −3 (Ω cm), respectively. The saturation temperature, response time, surface temperature uniformity, areal power density, and thermal resistance values were found to be 111 °C, 174 s, 11.42%, 0.299 W/cm 2 , and 282.8 °C cm 2 W −1 for a sample with an active area of 31.5 cm 2 and input voltage of 9 V. In addition, dryice cooled samples (−25 °C) showed impressive deicing performance depending on the input power. In case of 12 V, all ice was defrosted, and water droplets were evaporated within 2 min and 10 s. During this process, a heating rate of ⁓43 °C/min was achieved.

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“…[10] Along with a high optical transparency in the visible range, AZO films have superior electrical conductivity, good thermal and chemical stability. [11] Numerous methods and techniques have been reported to deposit AZO films like chemical vapor deposition (CVD), [12] RF magnetron sputtering, [11,13,14,15] sol-gel method, [16] spray pyrolysis, [17][18][19] and pulsed laser deposition. [20][21][22][23] RF magnetron sputtering is one of the promising methods for the deposition of AZO films because it offers film deposition at lower temperatures as well as a better adhesion than other methods.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependent studies on radio frequency sputtered Al doped ZnO thin film

Bhujbal¹,

Pathan²,

Chaure³

2020

Eng. Sci.

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In this work, highly conductive and transparent Al: ZnO (Al doped ZnO, i. e., AZO) thin films were grown by radio frequency (RF) magnetron sputtering technique at a typical deposition temperature. The effect of deposition temperature on the structural, morphological, optical and electrical properties was studied. The x-ray diffraction (XRD) studies revealed a hexagonal wurtzite crystal structure for all AZO layers with a (002) preferred orientation along the c-axis. Columnar, compact, uniform grain growth of the layer was observed from atomic force microscopy (AFM) images. The deposition temperature had an influence on the surface roughness and average grain size of deposited films, which could be confirmed by means of AFM images. Optical studies confirmed that both optical band gap energy and urbach energy were influenced by the substrate temperature. Highly transparent films with an energy band gap ranging from 3.48 to 3.65 eV were obtained upon changing the deposition temperature from 22 to 400. The presence of defects was confirmed by ℃ photoluminescence (PL) spectra. A systematic measurement of the electrical parameters like barrier height, and ideality factor of the devices (Ag/Al:ZnO) was carried out with the help of I-V characteristic. This study may be useful for the design and fabrication of AZO based electrodes for solar cell applications.

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Transparent conducting properties of Mg and Al co-doped ZnO thin films deposited by spray pyrolysis technique

Cited by 33 publications

References 14 publications

Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets

Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets

Solution processed glass/fluorine-doped tin oxide/aluminum-doped zinc oxide double layer thin films for transparent heater and near-infrared reflecting applications

Temperature dependent studies on radio frequency sputtered Al doped ZnO thin film

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