Transparent conductive electrodes for electrochromic devices: A review

Granqvist, Claes‐Göran

doi:10.1007/bf00331211

Cited by 328 publications

(149 citation statements)

References 122 publications

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“…The development of materials that combine the properties of electronic conductivity and optical transparency has resulted in a broad range of technologies spanning capacitive sensing [1,2], energy applications [3], optoelectronics [4,5], photocatalysis and gas sensing [6,7], electrochromic devices [8][9][10], and beyond [11,12]. Semiconducting oxides, known as transparent conducting oxides (TCOs), have proved to be among the most successful materials in this respect [13][14][15], particularly those based on In 2 O 3 , SnO 2 , and ZnO (and combinations of all three) [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Buckeridge

Catlow

Farrow

et al. 2018

Phys. Rev. Materials

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The source of n-type conductivity in undoped transparent conducting oxides has been a topic of debate for several decades. The point defect of most interest in this respect is the oxygen vacancy, but there are many conflicting reports on the shallow versus deep nature of its related electronic states. Here, using a hybrid quantum mechanical/molecular mechanical embedded cluster approach, we have computed formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides: In 2 O 3 , SnO 2 , and ZnO. We find that, in all three systems, oxygen vacancies form well-localized, compact donors. We demonstrate, however, that such compactness does not preclude the possibility of these states being shallow in nature, by considering the energetic balance between the vacancy binding electrons that are in localized orbitals or in effective-mass-like diffuse orbitals. Our results show that, thermodynamically, oxygen vacancies in bulk In 2 O 3 introduce states above the conduction band minimum that contribute significantly to the observed conductivity properties of undoped samples. For ZnO and SnO 2 , the states are deep, and our calculated ionization energies agree well with thermochemical and optical experiments. Our computed equilibrium defect and carrier concentrations, however, demonstrate that these deep states may nevertheless lead to significant intrinsic n-type conductivity under reducing conditions at elevated temperatures. Our study indicates the importance of oxygen vacancies in relation to intrinsic carrier concentrations not only in In 2 O 3 , but also in SnO 2 and ZnO.

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Section: Introductionmentioning

confidence: 99%

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Buckeridge

Catlow

Farrow

et al. 2018

Phys. Rev. Materials

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“…It has fascinating properties such as strong interaction between certain poisonous gas molecules and its surfaces 3 . These properties make In 2 O 3 , a remarkable material for a variety of applications such as solar cells 4 , Liquid Crystal Displays 5 , Architectural Glasses 6 , Gas Sensors 7 , Flat Panel Display 8 , and in Photo-catalytic conversions 9 . To widen the technological applications of In 2 O 3 , investigations were made to synthesize them in different forms such as nanotubes, nanobelts, nano wires and nanoparticles.…”

Section: Introductionmentioning

confidence: 99%

Effect of Capping Agent on the Morphology, Size and Optical Properties of In2O3 Nanoparticles

et al. 2017

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The Indium Oxide (In 2 O 3 ) nanoparticles were synthesized through Acacia gum mediated method with the surfactants CTAB (Cetyl Trimethyl Ammonium Bromide) and SDBS (Sodium Docecyl Benzene Sulfonate). The characterization of the synthesized In 2 O 3 nanoparticles was carried out by XRD, FTIR, RAMAN, TEM, SEM, EDAX, UV-Vis and PL techniques. TG-DTA analysis was performed to know the calcination temperature of In 2 O 3 nanoparticles. XRD analysis confirmed the crystalline nature of the synthesized In 2 O 3 nanoparticles. The morphology and chemical composition were characterized by TEM, SEM and EDAX respectively. It was observed that morphology and size of synthesized nanoparticles measured by TEM and SEM analysis were dependent on the type of capping agent (surfactant) used. Raman and UV-Vis spectral analysis confirmed that the band gap value of CTAB capped In 2 O 3 particles were larger than the SDBS capped In 2 O 3 particles. FTIR analysis indicated that the bands were stretched in In 2 O 3 particles capped by SDBS than by CTAB. From the photoluminescence studies (PL technique), a blue shift in the emission peaks of CTAB and SDBS capped In 2 O 3 particles was observed that indicates larger optical band gap than the bulk.

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“…1,2 The most widely studied materials employed for optoelectronic devices that accomplish these properties are several binary oxides like: In 2 O 3 , Ga 2 O 3 , Al 2 O 3 , ZnO, SnO 2 and TiO 2 . [3][4][5] The widespread use of In 2 O 3 in industrial processes covers the fabrication of window layers in solar cells, [6][7][8] light-emitting diodes, 9,10 electrochromic windows, 11 liquid-crystal displays, 12,13 and gas sensors.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and High-Pressure Study of Corundum-Type In₂O₃

et al. 2015

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Transparent conductive electrodes for electrochromic devices: A review

Cited by 328 publications

References 122 publications

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Effect of Capping Agent on the Morphology, Size and Optical Properties of In2O3 Nanoparticles

Synthesis and High-Pressure Study of Corundum-Type In₂O₃

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Transparent conductive electrodes for electrochromic devices: A review

Cited by 328 publications

References 122 publications

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Effect of Capping Agent on the Morphology, Size and Optical Properties of In2O3 Nanoparticles

Synthesis and High-Pressure Study of Corundum-Type In2O3

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Synthesis and High-Pressure Study of Corundum-Type In₂O₃