2006
DOI: 10.1016/j.tsf.2006.07.014
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Transparent conductive oxide thin films of tungsten-doped indium oxide

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Cited by 46 publications
(17 citation statements)
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“…The mobility change in W doped oxide semiconductors was correlated to the ionic impurities in lattice and the presence of grain boundaries [14,16]. The enhancement in scattering of the carriers by the W atoms in SnO 2 lattice due to the presence of the ionic impurities was also mentioned in the study of Huang et al [14].…”
Section: Resultsmentioning
confidence: 91%
See 1 more Smart Citation
“…The mobility change in W doped oxide semiconductors was correlated to the ionic impurities in lattice and the presence of grain boundaries [14,16]. The enhancement in scattering of the carriers by the W atoms in SnO 2 lattice due to the presence of the ionic impurities was also mentioned in the study of Huang et al [14].…”
Section: Resultsmentioning
confidence: 91%
“…The structural and electrical analyses proved that the W þ 6 ions in thin film bonded with O À 2 anion causes 4 electrons to be unbounded. These electrons enhance the carrier concentrations, as observed for W doped In 2 O 3 and SnO 2 thin films [14][15][16]. However, the change of carrier concentration with temperature was different for the thin films of pure and W doped ZnO samples whereas W doped ZnO behaved as typical semiconductors [17]; the carrier concentration in pure ZnO increased with decreasing temperature.…”
Section: Resultsmentioning
confidence: 98%
“…It has been shown that the electrical properties of In 2 O 3 can be drastically changed by doping with Sn, Mo [105,106], Zr, Ti [107,108], and W [109]. .…”
Section: In 2 O 3 -Basedmentioning
confidence: 99%
“…The experiment showed that various doping additives such as Sn [143][144][145], Ti [71], Zr [146,147], Mo [148], W [149] and Ge [70] can be used for these purposes. It is important to note here that with such doping it is possible to reach an exceptionally high carrier mobility in In 2 O 3 -based oxides even with a carrier concentration higher than 10 20 cm −3 (see Table 1).…”
Section: Electrophysical Propertiesmentioning
confidence: 99%