2020
DOI: 10.1002/smtd.202000074
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Transparent Electrodes Consisting of a Surface‐Treated Buffer Layer Based on Tungsten Oxide for Semitransparent Perovskite Solar Cells and Four‐Terminal Tandem Applications

Abstract: For semitransparent devices with n‐i‐p structures, a metal oxide buffer material is commonly used to protect the organic hole transporting layer from damage due to sputtering of the transparent conducting oxide. Here, a surface treatment approach is addressed for tungsten oxide‐based transparent electrodes through slight modification of the tungsten oxide surface with niobium oxide. Incorporation of this transparent electrode technique to the protective buffer layer significantly recovers the fill factor from … Show more

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Cited by 45 publications
(31 citation statements)
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“…The obtained 24.42% PCE is one of the high values reported among 4T–PSiSCs (Figure S16 and Table S8, Supporting Information). [ 68–86 ] The analysis in Figure S16, Supporting Information, shows that the CNT‐based top subcells reported in this article stand the highest, whereas the inadequate semitransparency of the top cells and the PCE of SiSC bottom cells limit the overall PCEs. This alludes that the incorporation of CNT electrodes into 4T–PSiSCs is the right way to achieve high photovoltaic performance in 4T–PSiSCs given that the parasitic optical loss in the CNT‐based PSCs can be reduced.…”
Section: Figurementioning
confidence: 84%
“…The obtained 24.42% PCE is one of the high values reported among 4T–PSiSCs (Figure S16 and Table S8, Supporting Information). [ 68–86 ] The analysis in Figure S16, Supporting Information, shows that the CNT‐based top subcells reported in this article stand the highest, whereas the inadequate semitransparency of the top cells and the PCE of SiSC bottom cells limit the overall PCEs. This alludes that the incorporation of CNT electrodes into 4T–PSiSCs is the right way to achieve high photovoltaic performance in 4T–PSiSCs given that the parasitic optical loss in the CNT‐based PSCs can be reduced.…”
Section: Figurementioning
confidence: 84%
“…Commonly used sputter buffer layers in p - i - n structured perovskite top cells in tandem applications are SnO 2 [ 66 ] or SnO 2 followed by zinc tin oxide (ZTO) [ 59 ] by ALD to further improve the band alignment at the buffer/TCO interface ( Figure 7 a), resulting in stable semitransparent PSC under 1-SUN illumination ( Figure 7 b). Thermally evaporated molybdenum oxide (MoO x ) has been the standard buffer layer in semitransparent n - i - p PSCs, however, it suffers from poor air stability [ 76 ]. ALD copper oxide (CuO x ) and vanadium oxide (VO x ) have also been reported as buffer layers in semitransparent PSCs [ 72 , 73 ].…”
Section: Ald Above the Perovskite Layermentioning
confidence: 99%
“…But fine nanometer-level control over the thickness of NbO y was found to be essential to avoid decreasing the transmittance, and also to avoid thermally-induced degradation of the organic hole transport layer during the deposition of the oxide by evaporation, in which temperatures could reach 80 °C. 31 Owing to the limitations of high work function n-type oxides, developing p-type oxide buffer layers is critical. Viable materials can be found by looking to the p-type oxides used as hole transport layers beneath the perovskite in p-i-n structured devices.…”
Section: Main Textmentioning
confidence: 99%