Transparent gas senor and photodetector based on Al doped ZnO nanowires synthesized on glass substrate

Hsu, Cheng-Liang; Hsu, Duo-Xi; Hsueh, Ting-Jen; Chang, Sheng-Po; Chang, Shao‐Chi

doi:10.1016/j.ceramint.2017.01.035

Cited by 38 publications

(14 citation statements)

References 24 publications

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“…Due to the substantial discrepancy of ionic radii, the applicability of Al(III) for substitution of Zn(II) is limited [5]. Indeed, the effect of aluminum on the sensitivity of Al-doped ZnO to CO and volatile organic compounds was observed to be minor [11,12]. This can be rationalized by the high solubility of the small Al(III) cations in bulk ZnO and the hindering of their migration to the surface.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of CO and OH adsorption on in-doped ZnO surfaces

Saniz

Sarmadian

Partoens

et al. 2019

Journal of Physics and Chemistry of Solids

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We present a first-principles computational study of CO and OH adsorption on non-polar ZnO (1010) surfaces doped with indium. The calculations were performed using a model ZnO slab. The position of the In dopants was varied from deep bulk-like layers to the surface layers. It was established that the preferential location of the In atoms is at the surface by examining the dependence of the defect formation energy as well as the surface energy on In location. The adsorption sites on the surface of ZnO and the energy of adsorption of CO molecules and OH-species were determined in connection to In doping. It was found that OH has higher bonding energy to the surface than CO. The presence of In atoms at the surface of ZnO is favorable for CO adsorption, resulting in an elongation of the C-O bond and in charge transfer to the surface. The effect of CO and OH adsorption on the electronic and conduction properties of surfaces was assessed. We conclude that In-doped ZnO surfaces should present a higher electronic response upon adsorption of CO.

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Section: Introductionmentioning

confidence: 99%

First-principles study of CO and OH adsorption on in-doped ZnO surfaces

Saniz

Sarmadian

Partoens

et al. 2019

Journal of Physics and Chemistry of Solids

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“…For hydrothermal process, a variety of materials such as glass [92], Si [93], SiO 2 [94], and Zn [95] have been widely used as substrates for growth of ZnO NWs. The substrate morphology affects the quality of ZnO NWs.…”

Section: B Hydrothermal Synthesis Methodsmentioning

confidence: 99%

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

Xiu-sheng

Liu

et al. 2021

IEEE Access

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Ultraviolet photodetectors have attracted significant research attention in recent years due to their potential applications in civilian and military fields. ZnO nanowires and nanorods have been regarded as the most potential candidates for ultraviolet photodetectors fabrication because of their peculiar characteristics and size effect, which are different from their bulk material. Recently, many novel routes and semiconductor features, such as the surface and interface engineering, the pryo-phototronic effect, the piezo-phototronic effect, the surface plasmon effect and the surface functionalization have been utilized to improve the photoelectric characteristics of ultraviolet photodetectors. Thus, the working mechanism of these effects existing in ZnO nanowires/nanorods-based ultraviolet photodetectors should be investigated in-depth. In this paper, firstly, the hydrothermal method and the chemical vapor deposition method, as two typical synthesis methods of ZnO nanowires are briefly reviewed. Secondly, we focus on reviewing the properties of varied ZnO nanowires/nanorods-based ultraviolet photodetectors constructed using the above mentioned semiconductor features with metal-semiconductor-metal structure, Schottky barrier structure, vertical p-n heterojunction structure and core-shell heterostructure. Furthermore, the most attractive self-powered ultraviolet photodetectors are systematically reviewed. For various ZnO nanowires/nanorods-based ultraviolet photodetectors, we put the emphasis on the working mechanism of semiconductor features to improve the properties of the photodetectors. Finally, we give an outlook on the future development of ZnO nanowires/nanorods-based ultraviolet photodetectors.

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“…Gas-phase methods, which include chemical vapor deposition, vacuum evaporation, and sputtering, provide a high level of purity and structural homogeneity but run at high cost owing to expensive equipment and high energy consumption of the operation. , Chemical solution methods are less expensive, suitable for large-area application, and environmentally benign. Despite greater difficulty in controlling the material structure, solution processing has been extended to a large range of materials with high quality. − Importantly, solution-based methods are amenable to flexible, plastic substrates.…”

Section: Introductionmentioning

confidence: 99%

Flexible Ultraviolet Photodetectors Based on One-Dimensional Gallium-Doped Zinc Oxide Nanostructures

Young

Liu

Shiblee

et al. 2020

ACS Appl. Electron. Mater.

119

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Wide band gap semiconductors such as ZnO are characterized by unique optoelectronic properties, which have led to numerous applications in the field of sensors and optoelectronics. These components are commonly fabricated on rigid substrates. However, the same synthesis method cannot be used to fabricate these components on flexible substrates. In this work, we present a method to fabricate metal−semiconductor−metal ultraviolet photodetectors with ZnO nanorods on flexible substrates. It is observed that the overall characteristics of the fabricated ZnO nanorod photodetector are greatly enhanced by doping with gallium (Ga). The nanorods are grown on a flexible substrate (poly(ethylene 2,6-naphthalate)) at a low temperature of 80 °C. The performance of Ga-doped ZnO nanorods (GZO) shows a significant improvement in electrical measurements compared to pure ZnO nanorods. The photocurrent-to-dark current ratios of both ZnO and GZO nanorod-based photodetectors are approximately 8.5 and 570.2 under a 1 V bias, respectively. The dark current and photocurrent are substantially improved by the addition of the Ga dopant. Transient response measurements indicated that the GZO nanorod photodetectors are stable and reproducible, and no change in the current−voltage characteristics is noted after multiple bending cycles. These results indicate that Ga-doping can improve the ZnO nanorod optical and electric characteristics; this proposed method is useful for device fabrication on low-melting-point substrates to produce flexible costeffective devices.

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Transparent gas senor and photodetector based on Al doped ZnO nanowires synthesized on glass substrate

Cited by 38 publications

References 24 publications

First-principles study of CO and OH adsorption on in-doped ZnO surfaces

First-principles study of CO and OH adsorption on in-doped ZnO surfaces

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

Flexible Ultraviolet Photodetectors Based on One-Dimensional Gallium-Doped Zinc Oxide Nanostructures

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