Transparent p‐NiO/n‐ZnO diodes used in circuit rectifiers

Bae, Heesun; Lee, Kyung Ha; Lee, Kwang H.; Song, Jee-Hun; Im, Seongil

doi:10.1002/pssr.201206420

Cited by 5 publications

(2 citation statements)

References 9 publications

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“…We obtained a carrier concentration ( N ) for the AgI thin films of −1.7(6) × 10 13 cm –3 , conductivity (ρ) of 7.00(4) × 10 –3 Ω –1 m –1 , and a mobility (μ) of 5(1) × 10 1 cm 2 V –1 s. For the CuI thin films, we obtained N = 2.43(1) × 10 18 cm –3 , ρ = 3.201(9) × 10 –1 Ω –1 m –1 , and μ = 8.01(2) cm 2 V –1 s, which are comparable to previous data in Table S1. Further effects of the AgI–CuI diode include the points of vanishing current flow, which deviate from zero bias by approximately 0.2 V. The on/off ratio was achieved using the current at V = +2 V divided by the absolute value of the current at V = −2 V. The on/off ratio of the n-AgI/p-CuI diodes was 9.4 × 10 4 , comparable to that of the transparent heterojunction diodes such as p-CuI/n-ZnO, p-NiO x /n-TiO x , and p-NiO/n-ZnO. − The ideality factor was estimated to be η = 1.00(9) via a linear fit in a ln ( J ) versus V ( V ) plot in the +0.2 V ≤ V ≤ +0.5 V regime, indicating a range between η = 1 (diffusion current) and η = 2 (recombination–generation).…”

Section: Resultsmentioning

confidence: 94%

Air-Stable Transparent Silver Iodide–Copper Iodide Heterojunction Diode

Cha

Jung

2017

ACS Appl. Mater. Interfaces

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Transparent AgI-CuI heterojunctions with high rectifying diode behavior were prepared via vapor-phase iodization of metal thin films on transparent conducting oxide substrates. At room temperature, Ag and Cu metal thin films were quickly transformed into the transparent and well-crystallized β-phase of AgI and the γ-phase of CuI, respectively. The AgI and CuI films exhibited n-type and p-type semiconductor properties, respectively, with wide band gaps. The heterojunctions were obtained by applying the CuI film to the AgI film in a sequential iodization process. AgI compounds generally have poor air-stability under light, making them suboptimal for use in electronic applications. Here, we used a CuI top layer to inhibit the photodecomposition of the AgI bottom layer, resulting in an air-stable and smooth AgI-CuI film. We also propose a simple patterning method for the AgI-CuI layer using selective decomposition of AgI without the need for lithography equipment or toxic chemicals. Although there is metal ion exchange between the two layers, each layer has a different chemical composition and crystal structure; therefore, the AgI-CuI heterojunction exhibits pn-diode behavior with a rectifying ratio of 9.4 × 10, which is comparable to that of other transparent pn-diodes. These findings open a new path for electronic application of AgI materials.

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Section: Resultsmentioning

confidence: 94%

Air-Stable Transparent Silver Iodide–Copper Iodide Heterojunction Diode

Cha

Jung

2017

ACS Appl. Mater. Interfaces

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“…Transparent p-n heterojunctions have been widely studied due to their promising applications in optoelectronics [1] and microelectronics [2,3]. Heterojunction photodetectors (PD) are mainly developed using vacuum-based techniques such as evaporation or sputtering.…”

Section: Introductionmentioning

confidence: 99%

Solution-route low-temperature fabrication of thin-film p-n junctions

Panama¹,

Ayag²,

Kim³

2016

Semicond. Sci. Technol.

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In this work, p-n junctions were fabricated at low temperature by means of UV-assisted thermal annealing. At 200 °C, remarkable rectifying and optical properties were observed due to the conversion of the sol-gel precursors to oxide films, which was aided by UV exposure. The resulting p-NiO/n-ZnO structures are featured as the thinnest ever reported (≈55 nm) based on a solution process with a large forward electrical current 10 −2 -10 −1 A cm −2 and the lowest leakage current (1 μA cm −2 ). UV light and precursor solution engineering contributed to form metal-oxide bonding at relatively low temperature in ambient conditions. The heterojunctions fabricated by the proper combination of these alternatives and simple processes were evaluated using UV-vis and FT-IR spectroscopy, FE-SEM, AFM, XRD, XPS, and I-V curves.

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