2019
DOI: 10.1016/j.surfcoat.2019.01.099
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Transparent p-NiO/n-ZnO heterojunction ultraviolet photodetectors prepared on flexible substrates

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Cited by 24 publications
(8 citation statements)
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“…These photodetectors can be constructed directly on flexible substrates or fabricated on rigid substrates that can then be transferred. To date, various types of novel flexible photodetectors, including fully flexible and transparent photodetectors, have been demonstrated, increasing their potential as next-generation wearable sensors that support conformal electronic systems. …”
Section: Introductionmentioning
confidence: 99%
“…These photodetectors can be constructed directly on flexible substrates or fabricated on rigid substrates that can then be transferred. To date, various types of novel flexible photodetectors, including fully flexible and transparent photodetectors, have been demonstrated, increasing their potential as next-generation wearable sensors that support conformal electronic systems. …”
Section: Introductionmentioning
confidence: 99%
“…So, we investigated multilayer thin films as a ZnO heterojunction. The technological values of pÀn junctions with high quality have grown greatly and from this point on, their fabrication has become a considerable necessity in recent decade (Huang et al, 2019). On the other hand, some review studies such as study on nanocomposite and heterojunction photocatalysts made from ZnO and its combinations (Goktas & Goktas, 2021) indicates on multiple applications.…”
Section: Introductionmentioning
confidence: 99%
“…Blindness to visible light is highly desired by UV PDs, and wide bandgap semiconductors. Owing to their many outstanding properties such as wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO-based oxides have been exploited as one of the most promising candidates for UV detectors [1][2][3][4][5][6][7][8][9]. Among already-exploited ZnO-based oxides, Ga doped ZnO (GZO) show improved electrical conducting properties [10][11][12] and extended effective band gap over 4.4 eV [12] with respect to pure ZnO.…”
Section: Introductionmentioning
confidence: 99%