Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

Fortunato, Elvira; Barros, Rogério Meira; Barquinha, Pedro; Figueiredo, V.; Park, Sang‐Hee Ko; Hwang, Chi‐Sun; Martins, Rodrigo

doi:10.1063/1.3469939

Cited by 287 publications

(215 citation statements)

References 19 publications

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“…In general, p-type metal oxide semiconductors are characterized by a band gap E g ranging from 1.3 eV to 2.7 eV, 71,74 high transmittance in the visible range (>85%), 257,258 and carrier density (N) from 10 8 cm À3 (for NWs) 259 to 10 15 cm À3 (for high-quality single crystals). 73 Already since 2005 when the first p-type TFT based on Zndoped Ga 2 O 3 (Ga 2 O 3 :Zn) NWs was realized by Chang et al, 70 it was clear that the main limitation of p-type metal oxide semiconductors is linked to their electronic structure.…”

Section: A P-type Metal Oxide Semiconductorsmentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

560

430

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Section: A P-type Metal Oxide Semiconductorsmentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

560

430

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“…Whereas, few reports has been cited to investigate the micro-structural and electrical properties of SnO [8,9]. The SnO has been marked as anode material [10] and has been employed for other applications such as for gas sensitive material [11], coating substance [12], catalyst [12], precursor for the production of tin dioxide [13],and for p-channel thin film transistor [14,15]. The reported crystal habit of SnO is tetragonal crystal structure which is similar to that of the 'red' (a or litharge) modification of isovalent PbO [16].…”

Section: Introductionmentioning

confidence: 99%

Study of microstructural, optical and electrical properties of Mg dopped SnO thin films

Ali

Muhammad

Hussain

et al. 2013

J Mater Sci: Mater Electron

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Mg doped SnO thin films were fabricated via electron beam evaporator on the glass substrate. The XRD analysis showed that reference and Mg doped SnO thin films were consisted of tetragonal a-SnO phase with preferred directions along (101) and (002) orientations. It was observed that the intensity of the diffraction pattern peaks increased and crystallite size decreased with the Mg doping. Scanning electron microscopy showed that the needlelike particles having length in the range of 0.4-0.6 lm with a diameter of 0.1-0.2 lm are sintered together to form a compact structure of Sn 1-x Mg x O layer. In the Raman spectrum, two active mode (A 2u and E u ) were observed for Sn 1-x Mg x O thin films. The complex plot (Nyquist plot) showed the data point laying on a single semicircle and the dc resistance increases with the increase of Mg doping concentration.

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“…The I D -V D output curve shown in the insert of Fig. 2 Measured and simulated output curves [4][5][6][7] Reported mobility (cm 2 /V · s) Simulated mobility (cm 2 /V · s) Simulated carrier density (cm −3 )…”

Section: Simulation Resultsmentioning

confidence: 99%

Mobility Assessment of Depletion-Mode Oxide Thin-Film Transistors Using the Comprehensive Depletion-Mode Model

Zhou

Yeh

Archila

et al. 2014

ECS J. Solid State Sci. Technol.

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In an enhancement-mode, n-channel (p-channel) oxide thin-film transistor (TFT), current arises as a consequence of electron (hole) transport within a narrow accumulation layer. The square-law model accurately describes enhancement-mode TFT behavior and establishes the equations appropriate for carrier mobility extraction. In contrast, in a depletion-mode oxide TFT, carrier transport can occur within an accumulation layer and/or within the 'bulk' portion of the channel. The comprehensive depletion-mode model accurately describes depletion-mode TFT behavior and establishes a set of equations, different from those obtained from squarelaw theory, which can be used for carrier mobility extraction. Simulation reveals that when square-law theory mobility extraction equations are used to assess depletion-mode TFTs, the estimated interface mobility is often overestimated. We recently proposed a general procedure for the electrical characterization of oxide thin-film transistors (TFTs).1 This procedure was advanced so that future researchers are able to avoid common measurement artifacts which would render their oxide TFT electrical assessment unreliable. The intent of the present contribution is to warn of another measurement artifact -mobility overestimation when evaluating a depletion-mode TFT -and to elucidate the subtle nature of this effect via simulation.As typically defined, the gate turn-on (V ON ) and threshold voltage (V T ) of a depletion-mode TFT are negative (positive) for an n-channel (p-channel) TFT. This means that mobile carriers (electrons or holes) are present in the channel even when no gate voltage is applied. Depending on the polarity, an applied voltage can either enhance or deplete the concentration of carriers in the channel of a depletionmode TFT. When the carrier concentration is enhanced by the applied gate voltage, these additional carriers are induced into an accumulation layer existing in close physical proximity to the gate insulator. Thus, two kinds of carriers -interface and 'bulk' -contribute to current in a depletion-mode TFT. The mobility of an interface carrier is expected to be less than the mobility of a 'bulk' carrier due to interface roughness and other types of interface scattering. These considerations, it turns out, often lead to depletion-mode TFT mobility overestimation artifacts since carriers being transported in the 'bulk' (with higher mobility) are inadvertency included in the estimation of gate voltage-induced interface transport.Elucidation of depletion-mode TFT mobility overestimation artifacts is accomplished by simulation of TFT current -voltage (I-V) characteristics using the comprehensive depletion-mode model.2 This model was originally developed for n-channel TFTs. However, we extend and refine this model to p-channel TFT behavior and employ it for the assessment of p-channel oxide TFTs since this topic has elicited a significant amount of recent interest. 3-21 TFT ModelingTransfer curves and corresponding energy band diagrams distinguishing between enhancement-a...

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Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

Cited by 287 publications

References 19 publications

Metal oxide semiconductor thin-film transistors for flexible electronics

Metal oxide semiconductor thin-film transistors for flexible electronics

Study of microstructural, optical and electrical properties of Mg dopped SnO thin films

Mobility Assessment of Depletion-Mode Oxide Thin-Film Transistors Using the Comprehensive Depletion-Mode Model

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