Transparent resistive switching memory using aluminum oxide on a flexible substrate

Abstract

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film

“…A linear I–V characteristics of the device in the LRS confirms the ohmic behavior, whereas asymmetric nonlinear I–V characteristics in HRS indicate the presence of a barrier on the Al/CFO interface. The nonlinear I–V characteristics in HRS of the device indicates that the conduction mechanism can be Schottky emission 38 , Poole Frenkel conduction 39 , or space charge limited current (SCLC) conduction 40 . These different conduction mechanisms can be identified from their specific voltage dependence on the current.…”

Charge dynamics in aluminum oxide thin film studied by ultrafast scanning electron microscopy

“…It has been shown that it is possible to create oxygen vacancies in its crystalline lattice by irradiating pure crystals with heavy ions [3], neutrons [4], electrons [5], gamma rays [6] as well as by vacuum heating polycrystalline alumina powder [7]; the vacancies act as color centers, giving rise to characteristic absorption bands at energies below the bandgap [8]. The interaction of color centers with UV light makes alumina interesting also for optoelectronics applications, both in radiation detection [9] and in data storage [10,11]. Excitation, lifetime and decay pathways of excited states of the most common oxygen vacancies in alumina have been studied by photoluminescence [12] and cathodoluminescence [13].…”

Wearable Intrinsically Soft, Stretchable, Flexible Devices for Memories and Computing

“…Yeom et al [ 40 ] designed a transparent and flexible RSD that showed excellent memory performance even in its bent state. IZO (Indium Zinc Oxide) transparent electrodes (250 nm in thickness) were sputtered onto a flexible PET substrate.…”