Transparent Schottky Photodiode Based on AgNi NWs/SrTiO<sub>3</sub> Contact with an Ultrafast Photoresponse to Short‐Wavelength Blue Light and UV‐Shielding Effect

Yang, Wei; Yong, Zhang; Zhang, Yujia; Deng, Wanjun; Fang, Xiaosheng

doi:10.1002/adfm.201905923

Cited by 47 publications

(33 citation statements)

References 30 publications

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“…[24,44] It is noted that potential photocurrents are observed under 0 V, corresponding to the displayed open-circuit voltage (V oc ) of 0.05 V and photovoltaic self-powered performance from the Schottky barriers. [19] To study the response speed and device stability, the dynamic time-dependent photocurrent of the photodetector is tested upon 350 nm illumination. Figure 3c presents I-t curves with several on-off cycles under six different bias voltages of 0-9 V. As bias voltage increases, the on-off ratio decreases due to the increased dark current.…”

Section: Application In Photodetectormentioning

confidence: 99%

Facet‐Dependent, Fast Response, and Broadband Photodetector Based on Highly Stable All‐Inorganic CsCu₂I₃ Single Crystal with 1D Electronic Structure

Shi

et al. 2020

Adv Funct Materials

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147

142

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Low-dimensional metal halides at molecular level, which feature strong quantum confinement effects from intrinsic structure, are emerging as ideal candidates in optoelectronic fields. However, developing stable and nontoxic metal halides still remains a great challenge. Herein, for the first time, high-crystalline and highly stable CsCu 2 I 3 single crystal, which is acquired by a low-cost antisolvent vapor assisted method, is successfully developed to construct high-speed (t rise /t decay = 0.19 ms/14.7 ms) and UV-tovisible broadband (300-700 nm) photodetector, outperforming most reported photodetectors based on individual all-inorganic lead-free metal halides. Intriguingly, facet-dependent photoresponse is observed for CsCu 2 I 3 single crystal, whose morphology consists of {010}, {110}, and {021} crystal planes. The on-off ratio of {010} crystal plane is higher than that of {110} crystal plane, mainly owing to lower dark current. Furthermore, photogenerated electrons are localized in twofold chains created by [CuI 4 ] tetrahedra, leading to relatively small effective mass and fast transport mobility along the 1D transport pathway. Anisotropic carrier transport characteristic is related to stronger confinement and higher electron density for {110} crystal planes. This work not only demonstrates the great potential of CsCu 2 I 3 single crystal in high-performance optoelectronics, but also gives insights into 1D electronic structure associated with fast photoresponse and high anisotropy.

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Section: Application In Photodetectormentioning

confidence: 99%

Facet‐Dependent, Fast Response, and Broadband Photodetector Based on Highly Stable All‐Inorganic CsCu₂I₃ Single Crystal with 1D Electronic Structure

Shi

et al. 2020

Adv Funct Materials

Self Cite

147

142

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“…The photocurrent rise time (τ r , the time required for the photocurrent to increase from 10% to 90% of the peak) and fall time (τ f , time required for the photocurrent to decrease from 90% to 10% of the peak) were determined by operating the device at high speed. [21,22] The τ r and τ f values are 100 and 316 µs, as shown in Figure S9b (Supporting Information). Further, the cutoff frequency (f 3dB ) of the device at 3 dB was estimated to be 3.5 kHz by using the following The variation of the photocurrent as a function of light intensity (P) fitted by a power law.…”

Section: Resultsmentioning

confidence: 98%

Controllable, Self‐Powered, and High‐Performance Short‐Wavelength Infrared Photodetector Driven by Coupled Flexoelectricity and Strain Effect

et al. 2021

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This induced internal polarization field, in response, could redistribute the concentration of free carriers within semiconductors and at its contact interface, thereby changes the overall charge transport behavior, indeed analogous to the piezoelectric effect. [1,5] Importantly, strain gradient is the key to the flexoelectric effect; however, applied strain, in principle, will also modulate the electronic structure, which in turn could introduce conceptually innovative and till "forbidden" functionalities. [1,4,6] For instance, applied strain-induced broken crystal symmetry modify the effective masses of charge carriers, which leads to generating a pronounced shift in the effective bandgap of semiconductors, like silicon, TiO 2 , and others. [7][8][9] In fact, theoretically, it has been predicted that the fundamental bandgap of the silicon could be shrunk considerably (up to 1800 nm, e.g., short-wavelength infrared) with strain engineering. [9] As a basic building block, silicon is widely used in the microelectronics industry; however, owing to its fundamental optical bandgap (1.12 eV), the use of silicon for optoelectronics (including photovoltaics) is still limited to visible and near-infrared spectral range (λ ≤ 1100 nm). Indeed, the key challenge is to enlarge the broadband photoabsorption (up to short-wavelength infrared) of silicon, such that it can be applied for commercial application: however, this yet remained a critical challenge.Recently, distinct from the p-n junction-based photovoltaic effect (PV), the flexoelectric effect driven zero-bias photocurrent under light illumination has been demonstrated, known as the flexo-photovoltaic (FPV) effect. [6] Therefore, being universal property, strain gradient induced FPV effect and simultaneously modification of the effective bandgap exceeds the fundamental bandgap absorption limit not only for silicon but other class of semiconductors as well. However, the flexoelectric-driven photo response is still reported to the fundamental bandgap modification. Herein, we demonstrate that a photon sensing of the single crystal silicon is extended far beyond the fundamental bandgap by utilizing the flexoelectric effect. Particularly, the localized force applied by a pointed tip induces long-range distributed inhomogeneous strain, which not only breaks the centrosymmetry but also extend the fundamental Mechanical deformation-induced strain gradients and coupled spontaneous electric polarization field in centrosymmetric materials, known as the flexoelectric effect, can generate ubiquitous mechanoelectrical functionalities, like the flexo-photovoltaic effect. Concurrently, nano/micrometer-scale inhomogeneous strain reengineers the electronic arrangements and in turn, could alter the fundamental limits of optoelectronic performance. Here, the flexoelectric effect-driven self-powered giant shortwavelength infrared (λ ≤ 1800 nm) photoresponse from centrosymmetric bulk silicon, indeed far beyond the fundamental bandgap (λ = 1100 nm) is demonstrated. Particularly, large on/off...

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“…To utilize this composite as a pressure sensor, we formed stretchable electrodes on both surfaces of the film using AgNWs. AgNW‐based electrodes have been reported to exhibit excellent optoelectrical performance and mechanical stability, [ 31,32 ] but only when nanowires are solidly attached to the substrate. In other words, to form an AgNW‐based stretchable electrode on the surface of a microfibril‐based porous film, the nanowires should be firmly attached to the RCU fibers exposed to the air, so that they are not separated from the fiber surfaces even when repeatedly pressed or stretched.…”

Section: Resultsmentioning

confidence: 99%

Ultrareproducible Capacitive Soft Pressure Sensor Using a Self‐Integrated Fibrous Network of Urethane Equipped with Diels–Alder Adducts

et al. 2021

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A pressure sensor based on a composite structure comprising air and polymer fibers is suggested to develop a capacitive pressure sensor that is virtually unaffected by repeated pressurization. Reversibly cross‐linkable urethane (RCU) derived from polybutadiene is newly synthesized for electrospinning, which exhibits the Diels–Alder (DA) reaction under mild conditions. RCU‐based microfibril film is fabricated and it succeeds in welding the intersections of the fibers without a collapse of their shape at mild temperature. This is accomplished via the DA reaction to prevent shearing between microfibrils when physical stress is applied to the film. The porous film is mechanically robust and reacts stably when the film is deformed or pressed. Electrodes are formed on both surfaces of the film using Ag nanowires (AgNWs). Vapor‐assisted partial melting of retro‐DA adducts is used to promote fusion of the polymer through the surface of the AgNWs and implement a robust stretchable electrode. The capacitance changes exceptionally uniformly with the magnitude of the applied pressure and deformation. Using this sensor, its functionality is successfully demonstrated by implementing a pressure sensor array composed of 9 px and measuring the external force applied to the balloon injected with air.

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Transparent Schottky Photodiode Based on AgNi NWs/SrTiO₃ Contact with an Ultrafast Photoresponse to Short‐Wavelength Blue Light and UV‐Shielding Effect

Cited by 47 publications

References 30 publications

Facet‐Dependent, Fast Response, and Broadband Photodetector Based on Highly Stable All‐Inorganic CsCu₂I₃ Single Crystal with 1D Electronic Structure

Facet‐Dependent, Fast Response, and Broadband Photodetector Based on Highly Stable All‐Inorganic CsCu₂I₃ Single Crystal with 1D Electronic Structure

Controllable, Self‐Powered, and High‐Performance Short‐Wavelength Infrared Photodetector Driven by Coupled Flexoelectricity and Strain Effect

Ultrareproducible Capacitive Soft Pressure Sensor Using a Self‐Integrated Fibrous Network of Urethane Equipped with Diels–Alder Adducts

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Transparent Schottky Photodiode Based on AgNi NWs/SrTiO3 Contact with an Ultrafast Photoresponse to Short‐Wavelength Blue Light and UV‐Shielding Effect

Cited by 47 publications

References 30 publications

Facet‐Dependent, Fast Response, and Broadband Photodetector Based on Highly Stable All‐Inorganic CsCu2I3 Single Crystal with 1D Electronic Structure

Facet‐Dependent, Fast Response, and Broadband Photodetector Based on Highly Stable All‐Inorganic CsCu2I3 Single Crystal with 1D Electronic Structure

Controllable, Self‐Powered, and High‐Performance Short‐Wavelength Infrared Photodetector Driven by Coupled Flexoelectricity and Strain Effect

Ultrareproducible Capacitive Soft Pressure Sensor Using a Self‐Integrated Fibrous Network of Urethane Equipped with Diels–Alder Adducts

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Product

Resources

About

Transparent Schottky Photodiode Based on AgNi NWs/SrTiO₃ Contact with an Ultrafast Photoresponse to Short‐Wavelength Blue Light and UV‐Shielding Effect

Facet‐Dependent, Fast Response, and Broadband Photodetector Based on Highly Stable All‐Inorganic CsCu₂I₃ Single Crystal with 1D Electronic Structure

Facet‐Dependent, Fast Response, and Broadband Photodetector Based on Highly Stable All‐Inorganic CsCu₂I₃ Single Crystal with 1D Electronic Structure