Transparent silicon carbide/tunnel SiO2 passivation for c‐Si solar cell front side: Enabling Jsc &gt; 42 mA/cm2 and iVoc of 742 mV

Pomaska, Manuel; Köhler, Malte; Procel, Paul; Zamchiy, A. O.; Singh, Aryak; Kim, Do Yun; Isabella, Olindo; Zeman, Miro; Li, Shenghao; Qiu, Kaifu; Eberst, Alexander; Smirnov, V. A.; Finger, F.; Rau, Uwe; Ding, Kaining

doi:10.1002/pip.3244

Cited by 17 publications

(12 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this work two tasks are achieved: 1) low series resistance without TCO, and 2) good metal/a-Si:H contact by an oxidation treatment at the interface. Further development that contributes to TCO-free SHJ solar cells could be replacing rear side TCO by proper back reflection design 28,29 and developing more transparent front-side heterojunction materials such as MoOx 30 , nc-SiOx 31 and µc-SiC 32,33 .…”

Section: Potential Of Substituting Tco Layer By Lateral C-si Bulk Conductionmentioning

confidence: 99%

Transparent-conductive-oxide-free front contacts for high-efficiency silicon heterojunction solar cells

Pomaska

Lambertz

et al. 2021

Joule

Self Cite

View full text Add to dashboard Cite

In order to compensate the insufficient conductance of heterojunction thin films, transparent conductive oxides (TCO) have been used for decades in both-sides contacted crystalline silicon heterojunction (SHJ) solar cells to provide lateral conduction for efficient carrier collection. In this work, we substitute the TCO layers by utilizing the lateral conduction of c-Si absorber, thereby enabling a TCO-free design. A series resistance of 0.32 Ωcm 2 and a fill factor of 80.7% were measured for a TCO-free back-junction SHJ solar cell with a conventional finger pitch of 1.8 mm, thereby proving that relying on lateral conduction in the c-Si bulk is compatible with low series resistances. Achieving high efficiencies in SHJ solar cells with TCO-free front contacts requires suppressing deterioration of the passivation quality induced by direct metal-a-Si:H contacts and in-diffusion of metal into the a-Si:H layer. We show that an ozone treatment at the a-Si:H/metal interface suppresses the metal diffusion and improves the passivation without increasing the

show abstract

Section: Potential Of Substituting Tco Layer By Lateral C-si Bulk Conductionmentioning

confidence: 99%

Transparent-conductive-oxide-free front contacts for high-efficiency silicon heterojunction solar cells

Pomaska

Lambertz

et al. 2021

Joule

Self Cite

View full text Add to dashboard Cite

show abstract

“…Several studies have therefore focused on SiC/Si heterojunction solar cells in which the crystalline Si possesses high sensitivity (narrow bandgap of 1.12 eV), while SiC serves as a passivation material. [175][176][177] Moreover, the robust SiC layer can simultaneously be a shield against extreme temperature, pH, humidity, salinity, etc., enabling the performances of SiC/Si heterostructures under harsh environments. [177][178][179][180] Accordingly, integrated Si-based solar supercapacitors/photocapacitors [161,162] can take advantage of this double layer heterojunction, where either SiC coating [107] or SiC-derived graphene coating [184][185][186] can also impede the chemical reactivity of Si, ensuring a stable energy storage.…”

Section: Conclusion and Future Prospectsmentioning

confidence: 99%

“…[177][178][179][180] Accordingly, integrated Si-based solar supercapacitors/photocapacitors [161,162] can take advantage of this double layer heterojunction, where either SiC coating [107] or SiC-derived graphene coating [184][185][186] can also impede the chemical reactivity of Si, ensuring a stable energy storage. On the other hand, previously reported solar cells [175][176][177] and other photovoltaic and optoelectronic devices [181][182][183] based on SiC/Si heterostructures would vice versa benefit from an integrated Si-based/SiC-based supercapacitor as a stable power supply, suggesting prospective research vision. In brief, it is predicted that the applicability of Si-based/SiC-based integrated energy systems is promising for next-generation semiconductor devices from both energy and fabrication perspectives.…”

Section: Conclusion and Future Prospectsmentioning

confidence: 99%

Advances in Si and SiC Materials for High‐Performance Supercapacitors toward Integrated Energy Storage Systems

Nguyen

Aberoumand

Dao

2021

Small

View full text Add to dashboard Cite

recently attracted considerable research attention thanks to its low mass density (2.33 g cm −3 ), nontoxicity, and biocompatibility. [6,7] Besides, the intrinsic semiconductor and tunable on-chip characteristics enable Si to be a central platform of several applications, including optoelectronics, [8,9] microelectronics, [10] smart sensors, [11,12] solar cells, [13][14][15] and drug-delivery systems. [16] From an energy perspective, seamless integration of energy storage systems onto these Si-based functional devices is highly desirable toward portable and wearable applications, or when the power supply is intermittent. Therefore, significant research has focused on Sibased energy storage, including Si-based batteries (mainly Li-ion batteries) and Sibased supercapacitors.In Li-ion batteries, Si has been intensively studied as a promising anode candidate due to the low working potential of 0.4 V (vs Li + /Li) and high theoretical capacity (3579 mAh g −1 ), compared to the conventional graphite anode. [17] However, as an alloy-type material, Si anode notoriously suffers from huge volume expansion/shrinkage during lithiation/delithiation (over 300%), leading to severe delamination and pulverization of electrodes, together with unstable and nonuniform solid electrolyte interphase layers. [18] These characteristics considerably affect the cyclic stability of Si-anode Li-ion batteries. Several strategies have been implemented to address the aforementioned challenges, including composite and coating materials design, [19][20][21][22][23][24] binder design, [25][26][27][28] and electrolyte modification. [29][30][31][32] These approaches nevertheless are mainly based on wet-chemistry methods with complicated synthesis techniques, which are not suitable for an integrated system. A very thin layer of Si has been proven to accommodate the mechanical stress during alloying/ dealloying. [33][34][35] Inspired by this concept, several studies have focused on thin film Si-anode batteries based on integrated circuit (IC)-compatible routes, and their potentials to be integrated with other functional Si-based devices. [36][37][38][39] However, the intricate charge storage mechanism of Si-based batteries inevitably limits their applications. In particular, batteries suffer from low power performance. Although parallel and/or series connections of batteries can guarantee high power, the device volume will be increased, which is not desirable for an integrated system. Furthermore, owing to their inferior stability and lifetime, batteries unavoidably require frequent replacements, meaning that they cannot be applied in devices such as bioimplant chips, biosensors, and harsh-environment sensors. [40,41] Silicon (Si), as the second most abundant element on Earth, has been a central platform of modern electronics owing to its low mass density and unique semiconductor properties. From an energy perspective, all-in-one integration of power supply systems onto Si-based functional devices is highly desirable, which inspires significant study ...

show abstract

Section: Potential Of Substituting Tco Layer By Lateral C-si Bulk Conmentioning

confidence: 99%

Transparent-Conductive-Oxide-Free Front Contacts for High Efficiency Silicon Heterojunction Solar Cells

Pomaska

Lambertz

et al. 2020

Preprint

Self Cite

View full text Add to dashboard Cite

In order to compensate the insufficient conductance of heterojunction thin films, transparent conductive oxides (TCO) have been used for decades in both-sides contacted crystalline silicon heterojunction (SHJ) solar cells to provide lateral conduction for efficient carrier collection. In this work, we substitute the TCO layers by utilizing the lateral conduction of c-Si absorber, thereby enabling a TCO-free design. A series resistance of 0.32 Ωcm2 and a fill factor of 80.7% were measured for a TCO-free back-junction SHJ solar cell with a conventional finger pitch of 1.8 mm, thereby proving that relying on lateral conduction in the c-Si bulk is compatible with low series resistances. Achieving high efficiencies in SHJ solar cells with TCO-free front contacts requires suppressing deterioration of the passivation quality induced by direct metal-a-Si:H contacts and in-diffusion of metal into the a-Si:H layer. We show that an ozone treatment at the a-Si:H/metal interface suppresses the metal diffusion and improves the passivation without increasing the contact resistivity. SHJ solar cells with TCO-free front contacts and ozone treatment achieve efficiencies of > 22%.

show abstract

Transparent silicon carbide/tunnel SiO₂ passivation for c‐Si solar cell front side: Enabling J_sc > 42 mA/cm² and iV_oc of 742 mV

Cited by 17 publications

References 24 publications

Transparent-conductive-oxide-free front contacts for high-efficiency silicon heterojunction solar cells

Transparent-conductive-oxide-free front contacts for high-efficiency silicon heterojunction solar cells

Advances in Si and SiC Materials for High‐Performance Supercapacitors toward Integrated Energy Storage Systems

Transparent-Conductive-Oxide-Free Front Contacts for High Efficiency Silicon Heterojunction Solar Cells

Contact Info

Product

Resources

About