Transparent with wide band gap InZnO nano thin film: Preparation and characterizations

Sathish, S.; Ahmad, Mardiana Idayu; Jamlos, Mohd Faizal; Bellan, Chandar Shekar; Pattiyappan, Sagadevan; Rajamani, Ranjithkumar; Sivaraman, Rathish Kumar

doi:10.1016/j.optmat.2015.10.003

Cited by 22 publications

(4 citation statements)

References 72 publications

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“…The determined band gap energy is 3.80 eV for as grown and annealed at 50 o C film whereas 3.79 eV for annealed at 100 o C and 3.76 eV for film annealed at 150 o C. It is clearly shows that the band gap energy values are decreases with increase of annealing temperature. This may be due to increase in grain size, decrease in number of defects and low oxygen content [37]. The determined band gap energy value of as grown film is good in agreement with early reported work on PVA-In 2 O 3 hybrid thin films [12].…”

Section: 5supporting

confidence: 90%

Hybrid Pva-In2o3 Nano Thin Film for Transparent Optical Devices

2017

IJAERD

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Section: 5supporting

confidence: 90%

Hybrid Pva-In2o3 Nano Thin Film for Transparent Optical Devices

2017

IJAERD

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“…[1][2][3][4][5][6] IZO is a wide-band-gap (3 eV) semiconductor and is commonly selected as the basic component in studies to adjust the electron concentration and electrical resistivity, which can be varied by more than three orders of magnitude by adjusting the chemical composition or controlling the deposition parameters. [7][8][9][10] Such features could allow IZO systems to be used as both transparent electrodes and semiconductor layers in optoelectronic devices and circuits. 11,12) Several studies have demonstrated that the incorporation of low-standard-electrode-potential (SEP) materials such as Mg, Zr, and Hf into IZO thin films can efficiently suppress oxygen-vacancy formation and reduce oxygen deficiencies, thereby improving the electrical performance and enhancing the bias stability of oxide thin-film transistors (TFTs).…”

Section: Introductionmentioning

confidence: 99%

Incorporation of sol–gel-derived Mg into InZnO semiconductor thin films for metal–semiconductor–metal ultraviolet photodetectors

Tsay¹,

Wu²

2017

Jpn. J. Appl. Phys.

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We incorporated Mg into InZnO (MIZO) semiconductor thin films and fabricated metal–semiconductor–metal (MSM) UV photodetectors by the sol–gel method. The effects of incorporating Mg into IZO films on the electrical and UV photoresponse properties were investigated and photoconductive UV detectors were realized using IZO-based films. The Mg content ([Mg]/[In + Zn]) was varied from 0 to 20% in the resultant solutions. Each as-coated sol–gel film was preheated at 300 °C for 10 min and annealed at 450 °C for 2 h to form dense oxide films. Results showed that all as-prepared IZO-based films had an amorphous phase structure, displayed a flat surface, and exhibited a high visible transmittance (≥90.0%). We found that UV light illumination increased the photocurrents in all IZO-based films, and that MIZO photodetectors exhibited better photocurrent generation than pure IZO photodetectors. The 20% Mg-doped IZO photodetectors exhibited the highest Ilight-to-Idark ratio (8.57) and the highest percentage of sensitivity (756.9).

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“…Particularly, optical studies on ZnO thin film are essential for the utilization in optoelectronic devices. In general, optical properties of ZnO can be tuned by varying microstructure, thickness, bandgap energy, optically active defects and growth/deposition conditions [2]. So far ZnO has been reported as one of the efficient materials for photocatalysis and photovoltaic because of its tuneable properties with low cost and non-toxicity [3,4].…”

Section: Introductionmentioning

confidence: 99%

Effect of the thickness on the photocatalytic and the photocurrent properties of ZnO films deposited by spray pyrolysis

et al. 2022

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In this work, we have investigated the structure, morphology, photoluminescence, photocatalytic and photocurrent properties of ZnO thin films as a function of their film thickness (tZnO) fabricated via ultrasonic spray pyrolysis technique. The X-Ray diffraction patterns exhibited the formation of polycrystalline wurtzite phase of ZnO. Scanning electron microscopy images showed the uniform morphology with nanorod structure. The photosensitivity and photocatalytic efficiency are found to be optimum at tZnO = 1200 nm and are attributed to the improved photogeneration of charge carriers and higher concentration of oxygen vacancies. A direct correlation is established between the photosensitivity and photodegradation process. The incident photon-to-electron conversion efficiency (IPCE) and photocatalytic efficiency for the ZnO film at tZnO = 1200 nm are estimated to be 31.5% and 100% respectively. The obtained result suggests that ZnO thin films are potential candidates for applications in various optoelectronic devices.

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Transparent with wide band gap InZnO nano thin film: Preparation and characterizations

Cited by 22 publications

References 72 publications

Hybrid Pva-In2o3 Nano Thin Film for Transparent Optical Devices

Hybrid Pva-In2o3 Nano Thin Film for Transparent Optical Devices

Incorporation of sol–gel-derived Mg into InZnO semiconductor thin films for metal–semiconductor–metal ultraviolet photodetectors

Effect of the thickness on the photocatalytic and the photocurrent properties of ZnO films deposited by spray pyrolysis

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