Transport and magnetoresistance in double-doped La(2+x)/3Sr(1−x)/3FexMn1−xO3 films

Kusaka, Jin; Zhao, Song; Tang, Jinke; Chen, C.L.

doi:10.1016/j.jallcom.2008.09.114

Cited by 5 publications

(2 citation statements)

References 38 publications

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“…Intrinsically, Fe 3 + cannot act as the double exchange partner with Mn 4 + . Ahn et al [21] and Jin et al [46] suggested that Fe ions act as trapping centers for the e g electrons and block the percolative hopping of the e g electrons between the Mn 3 + and Mn 4 + ions. The trapping centers perturb the double exchange mechanism, introducing a spatial distribution of the magnetic interaction.…”

Section: Transport Propertiesmentioning

confidence: 99%

Effect of the simultaneous substitution of two transition metals on the structural, magnetic and electrical properties of La0.6Sr0.4Mn1−2xCrxFexO3

Abdelkhalek

Kallel

et al. 2010

Journal of Magnetism and Magnetic Materials

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Section: Transport Propertiesmentioning

confidence: 99%

Effect of the simultaneous substitution of two transition metals on the structural, magnetic and electrical properties of La0.6Sr0.4Mn1−2xCrxFexO3

Abdelkhalek

Kallel

et al. 2010

Journal of Magnetism and Magnetic Materials

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“…Various articles exist in literature that investigates the dependence of the structural, electrical and magnetic properties of the sputtered LSMO films [26][27][28][29][30][31]. The characteristics of LSMO films are generally affected by the preparation conditions such as the deposition methods, working pressure, substrate temperature and the type of substrates [32].…”

Section: Introductionmentioning

confidence: 99%

Lateral parameter variations on the properties of La0.7Sr0.3MnO3 films prepared on Si (100) substrates by dc magnetron sputtering

Sahu¹

2010

Journal of Alloys and Compounds

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Electrical Resistivity Behavior and VRH Transport Mechanism in Semiconducting La0.6Sr0.4Mn1−2x Fe x Cr x O3 (0.10≤x≤0.25) Manganites

Abdelkhalek

Kallel

et al. 2013

J Supercond Nov Magn

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International audienceThe transport properties and conduction mechanism in La0.6Sr0.4Mn1−2x Fe x Cr x O3 (0≤x≤0.3) have been investigated. The undoped samples show metal-semiconductor transition with a peak of resistivity at a temperature T P , whereas for all doped compounds the semiconducting behavior persists in the whole temperature range. The insertion of Cr3+ and Fe3+ ions leads to the increase of resistivity because the simultaneous substitution of Fe3+ and Cr3+ for Mn3+ reduces the number of available hopping sites for the Mn e g↑ electron and suppresses the double-exchange mechanism. It was found that the transport mechanism for substituted samples is dominated by the variable range hopping of small polarons between localized states in a model where the various parameters estimated from Mott's relation obey the variable range hopping (VRH) mechanism

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Transport and magnetoresistance in double-doped La(2+x)/3Sr(1−x)/3FexMn1−xO3 films

Cited by 5 publications

References 38 publications

Effect of the simultaneous substitution of two transition metals on the structural, magnetic and electrical properties of La0.6Sr0.4Mn1−2xCrxFexO3

Effect of the simultaneous substitution of two transition metals on the structural, magnetic and electrical properties of La0.6Sr0.4Mn1−2xCrxFexO3

Lateral parameter variations on the properties of La0.7Sr0.3MnO3 films prepared on Si (100) substrates by dc magnetron sputtering

Electrical Resistivity Behavior and VRH Transport Mechanism in Semiconducting La0.6Sr0.4Mn1−2x Fe x Cr x O3 (0.10≤x≤0.25) Manganites

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