Transport and Magnetoresistance in Topological Insulator-Based Ferromagnetic/Insulator/Ferromagnetic Junction in the Presence of External Electric Field

Abstract

Using Landauer-Buttiker formalism, thin barrier approximation, and Klein tunneling theory, the effects of external electric field and induced exchange magnetic gap on the conductance and specifically magnetoresistance (MR) of a topological insulator-based ferromagnet/insulator/ferromagnet (TI-based F /I/F ) junction have investigated. Conductance and MR for parallel (P) and antiparallel (AP) magnetic gap configurations are obtained and discussed. The results of MR reveal a significant negative value for maximum magnetic gap at z = (n + 3/4)π (n = 0, 1...), i.e., in smaller insulator barrier strengths in the presence of an external electric field, while it appears at z = nπ (n = 1, 2...) without electric field in Ref.Linder et al., Phys. Rev. Lett., 104:067001, 2010 (z is the barrier strength). Also, we have found that maximum transmission probability (TP) increases with magnetic gap in the presence of electric field which is one for P case in z = (n + 1/6)π and approaches to one for induced magnetic gap near the Fermi energy for AP case in the absence of electric field and z = (n + 1/2)π . Finally, the conductance and MR oscillate with the magnetic gap and barrier strength.

Mexican-hat dispersions and high carrier mobility of γ-SnX (X = O, S, Se, Te) single-layers: a first-principles investigation

“…The physical properties of 2D layered structures strongly depend on the interlayer distance, the composition of the compound, the stacking configuration of layers, polymorph type, and so on. [4][5][6][7][8][9] For example, the electronic states of 2D bilayer structures depend strongly on their stacking configurations. 5 MXenes exhibit a high thermal conductivity and their thermal conductivity value is also highly dependent on the composition of the compounds.…”