Transport and optical properties of tin δ-doped GaAs structures

Kulbachinskii, V. A.; Кытин, В. Г.; Lunin, R. A.; Mokerov, V. G.; Senichkin, A.P.; Бугаев, А. С.; Karuzskii, A. L.; Perestoronin, A. V.; Schaijk, R.T.F. van; Visser, A. de

doi:10.1134/1.1187779

Cited by 17 publications

(6 citation statements)

References 31 publications

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“…Кроме того, по экспериментальным данным мы рассчитали так называемую квантовую подвижность дырок μ q . При определении подвижности электронов необходимо различать транспортное время релаксации и квантовое время релаксации [13][14][15][16][17]. Транспортное время релаксации импульса электрона τ t определяется средним временем между упругими рассеяния на примесях, существенно меняющими направление импульса, и может быть записано в виде…”

Section: образцы Sb 2-x Sn X Teunclassified

Влияние Легирования Оловом, Таллием И Медью На Квантовые Подвижности Дырок В Монокристаллах Теллурида Сурьмы

Ismailov¹,

Kulbachinskii²

2020

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In this work we report the results of the extraction of quantum mobilty μq of holes from the Shubnikov – de Haas (SdH) effect at T = 4.2 K in single crystals Sb2–xSnxTe3 (x = 0.0; 0.005; 0.0075; 0.01); Sb2–xTlxTe3 (x = 0.0; 0.005; 0.015; 0.05) and Sb2–xCuxTe3(x = 0.0; 0.01; 0.03; 0.05; 0.07; 0.10), samples synthesized by the Bridgman method. Tl exhibits donor properties in Sb2Te3 while Sn and Cu show an acceptor behavior. Quantum mobility of holes, evaluated from SdH oscillations, decreases under doping in Sn doped samples about two times, in Tl doped samples about three times and in Cu doped samples less than two times at maximal Cu content x = 0.1. At the same time maximal Cu doping is 6 times (as compared with Sn) and 2 times (as compared with Tl) more. All measurements were made to Orient the magnetic field along the C3 axis. In this case, for the six-ellipsoid surface of Fermi light holes, all sections of ellipsoids coincide, and only one oscillation frequency is observed.

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Section: образцы Sb 2-x Sn X Teunclassified

Влияние Легирования Оловом, Таллием И Медью На Квантовые Подвижности Дырок В Монокристаллах Теллурида Сурьмы

Ismailov¹,

Kulbachinskii²

2020

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“…Also for intersubband absorption, doping is very important to provide the carriers for the ground subband. The intersubband optical absorption in quantum well structures [16,17] and in - doped semiconductors has been studied before [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Effect of the Doping Layer Concentration on Optical Absorption in Si δ-Doped GaAs Layer

Dakhlaoui¹

2012

OPJ

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We study in this paper the intersubband optical absorption of Si - doped GaAs layer for different applied electric fields and donors concentration. The electronic structure has been calculated by solving the Schrödinger and Poisson equations self-consistently. From our results, it is clear that the subband energies and intersubband optical absorption are quite sensitive to the applied electric field. Also our results indicate that the optical absorption depends not only on the electric field but also on the donor's concentration. The results of this work should provide useful guidance for the design of optically pumped quantum well lasers and quantum well infrared photo detectors (QWIPs).

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“…Because the ionized impurity scattering is the principal factor that determines the carrier mobility, the advantage of the field effect transistor with the δ-doped channel over uniformly-doped materials is the smaller overlapping between impurities and carriers [2-4, 34, 35]. The infrared transitions between electron sublevels within δ-doped quantum wells are perspective for using in optoelectronics, especially, for infrared and terahertz modulators, switches, detectors, devices of nonlinear optics, quantum computing, and lasers [3,4,9,10,18,[23][24][25][26][27][28][29][30][31][32][33][34][35][36][37]. For these purposes simple and exact methods to calculate the electron spectrum in quantum structures and the electron wave functions are of great interest.…”

Section: Introductionmentioning

confidence: 99%

COMBINED METHOD FOR SIMULATING ELECTRON SPECTRUM OF Δ-Doped QUANTUM WELLS IN N-Si WITH MANY-BODY CORRECTIONS

Castrejon-Martinez¹,

Grimalsky²,

Gaggero‐Sager³

et al. 2013

PIER M

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The combined method to investigate the electron spectrum of single n-type δ-doped quantum wells in silicon is proposed. It is based on computing the electron potential energy by means of the Thomas-Fermi method at finite temperatures; then the obtained electron potential energy is applied to the iteration procedure with solving the Schrödinger equations for the electron spectrum and the Poisson one for the potential energy. The many-body corrections to the electron spectrum in the quantum well also have been investigated. The combined method demonstrates a rapid convergence. It is shown that that the simple Thomas-Fermi method gives a good approximation for the electron potential energy and for the total electron concentration within the well.

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Transport and optical properties of tin δ-doped GaAs structures

Cited by 17 publications

References 31 publications

Влияние Легирования Оловом, Таллием И Медью На Квантовые Подвижности Дырок В Монокристаллах Теллурида Сурьмы

Влияние Легирования Оловом, Таллием И Медью На Квантовые Подвижности Дырок В Монокристаллах Теллурида Сурьмы

Effect of the Doping Layer Concentration on Optical Absorption in Si δ-Doped GaAs Layer

COMBINED METHOD FOR SIMULATING ELECTRON SPECTRUM OF Δ-Doped QUANTUM WELLS IN N-Si WITH MANY-BODY CORRECTIONS

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