Transport and reactions in doped conjugated polymers: Electrochemical processes and organic devices

Paasch, G.

doi:10.1016/j.jelechem.2006.05.012

Cited by 23 publications

(12 citation statements)

References 42 publications

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“…Moreover, the fact that the shift of V th never saturates before reaching the applied stressing gate voltage would mean that it is never possible to fill all traps, i.e., the number of traps appears to be practically unlimited. Another proposed mechanism is based on the pairing of mobile holes into immobile bipolarons 16,17 but the predicted dynamics of the threshold-voltage shift deviates from the experimental findings for long times, as acknowledged by authors who have suggested this mechanism. 15 Ion motion in the gate dielectric could in principle lead to reversible bias-stress effects.…”

Section: Proton Migration Mechanism For the Instability Of Organic Fimentioning

confidence: 94%

Proton migration mechanism for the instability of organic field-effect transistors

Sharma

Mathijssen

Kemerink

et al. 2009

Applied Physics Letters

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During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based on hole-assisted production of protons in the accumulation layer and their subsequent migration into the gate dielectric. This model explains the much debated role of water and several other hitherto unexplained aspects of the instability of these transistors.

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Section: Proton Migration Mechanism For the Instability Of Organic Fimentioning

confidence: 94%

Proton migration mechanism for the instability of organic field-effect transistors

Sharma

Mathijssen

Kemerink

et al. 2009

Applied Physics Letters

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“…Also, by considering porous films, Barker [29], Albery [30], Buck [31,32] et Paasch [33,34,35,36] have calculated the electrochemical impedance of an electrode/film/electrolyte system.…”

Section: -Generalities On Porous Electrodesmentioning

confidence: 99%

“…By taking into account the electrolyte resistance, R s , and by using Equation (35), the electrochemical impedance of the electroactive film is equal to:…”

Section: -Electrochemical Impedancementioning

confidence: 99%

Redox switching of Prussian blue thin films investigated by ac-electrogravimetry

Kim

Gabrielli

Perrot

et al. 2012

Electrochimica Acta

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“…Several mechanisms have been suggested as an explanation, such as ͑i͒ trapping of mobile carriers in the bulk of the semiconductor, 17 ͑ii͒ trapping in disordered areas of the semiconductor, 7 ͑iii͒ trapping in regions in between crystalline grains of the semiconductor, 18 ͑iv͒ trapping in states at the semiconductor/dielectric interface, 8 and ͑v͒ pairing of mobile carriers to bipolarons in the semiconductor. 5,19 Two other important observations are that the effect is influenced by humidity 13,20,21 and that the effect is thermally activated, with an activation energy of about 0.6 eV, apparently independent of the organic semiconductor used. 11 Recently, we proposed a mechanism for the bias-stress effect in p-type field-effect transistors with SiO 2 gate dielectric that is based on production of protons from holes and water in the accumulation layer of the semiconductor and the subsequent migration of these protons into the gate dielectric.…”

Section: Introductionmentioning

confidence: 99%

Proton migration mechanism for operational instabilities in organic field-effect transistors

et al. 2010

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. (2010). Proton migration mechanism for operational instabilities in organic field-effect transistors. Physical Review B, 82(7), 075322-1/11. [075322]. DOI: 10.1103/PhysRevB.82.075322 DOI:10.1103/PhysRevB.82.075322 Document status and date:Published: 01/01/2010 Document Version:Publisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: Organic field-effect transistors exhibit operational instabilities involving a shift of the threshold gate voltage when a gate bias is applied. For a constant gate bias the threshold voltage shifts toward the applied gate bias voltage, an effect known as the bias-stress effect. Here, we report on a detailed experimental and theoretical study of operational instabilities in p-type transistors with silicon-dioxide gate dielectric both for a constant as well as for a dynamic gate bias. We associate the instabilities with a reversible reaction in the organic semiconductor in which holes are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric. We show how redistribution of charge between holes in the semiconductor and protons in the gate dielectric can consistently explain the experimental observations. Furthermore, we show how a shorter period of application of a gate bias leads to a faster backward shift of the threshold voltage when the gate bias is removed. The proposed mechanism is consistent with the observed acceleration of the bias-stress effect with increasing humidity, increasing temperature, and increasing energy of the highest molecular orbital of the org...

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Transport and reactions in doped conjugated polymers: Electrochemical processes and organic devices

Cited by 23 publications

References 42 publications

Proton migration mechanism for the instability of organic field-effect transistors

Proton migration mechanism for the instability of organic field-effect transistors

Redox switching of Prussian blue thin films investigated by ac-electrogravimetry

Proton migration mechanism for operational instabilities in organic field-effect transistors

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