Transport and recombination properties of group-III doped SiCNTs

Novel electronic and magnetic features in XC (X = Si and Ge) monolayers induced by doping with group-VA atoms

“…In other words, N and P/As dopants substitute C and X atoms, respectively. In addition, to evaluate the stability of the doped systems, cohesive energy E c can be calculated using the following expression: 58,59 E c ¼…”

“…In other words, N and P/As dopants substitute C and X atoms, respectively. In addition, to evaluate the stability of the doped systems, cohesive energy E c can be calculated using the following expression: 58,59 where E i is the energy of an isolated atom i , and n i is the number of i atoms in the supercell. Based on this equation, negative E c values may indicate structural-chemical stability, that is the doped systems are not decomposed into separated atoms, and vice versa .…”

Hierarchical Porosities Strategy to Enhance the Absorbing Performance of Graphene Aerogels

“…The existence of more defects with 3D‐RGA, which is verified by Raman spectra, reveals the defects of 3D‐HGA enhance the polarization loss ability. In addition, the conduction loss is another factor that affected the ε ″, the etching effect of H 2 O 2 results in more pores in graphene sheet in S3 and fewer pores in S1 and S2, and since the mobility is inversely proportional to the defect (ionized impurity) concentration, [ 29 ] the conductance loss of S3 is lower than that of S1 and S2, which reveals that the high concentration of H 2 O 2 is unfavorable for the construction of conduction path to conduction loss.…”

Effects of Microstructure and Neodymium Doping on Bi2Te3 Nanostructures: Implications for Thermoelectric Performance

“…We highlight that the role of TSS in the determination of these intriguing electronic transport behavior, which is manifested by both grain size dependence and Nd-doping, is quite reasonable considering the TI nature of Bi 2 Te 3 but might not be the sole mechanism. For instance, Nd-doping may form polar bonds that enhance charge carrier scattering by optical phonons, and counter-size effects such as those shown in Figure d may be attributed to dangling bonds on the NP surface. , Furthermore, a shift of the Fermi level due to Nd-doping may also take place . We expect that the effects of TSS should be pronounced at lower temperatures.…”