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We demonstrate an approach to creating nanoscale potentials in van der Waals layers integrated with a buried programmable ferroelectric layer. Using ultra-low-voltage electron beam lithography (ULV-EBL), we can program the ferroelectric polarization in Al 1−x B x N (AlBN) thin films, generating structures with sizes as small as 35 nm. We demonstrate the ferroelectric field effect with a graphene/vdW stack on AlBN by creating a p−n junction. This resist-free, high-resolution, contactless patterning method offers a new pathway to integrate ferroelectric films with a wide range of two-dimensional layers including transition-metal dichalcogenides (TMD), enabling arbitrary programming and top-down creation of multifunctional devices.
We demonstrate an approach to creating nanoscale potentials in van der Waals layers integrated with a buried programmable ferroelectric layer. Using ultra-low-voltage electron beam lithography (ULV-EBL), we can program the ferroelectric polarization in Al 1−x B x N (AlBN) thin films, generating structures with sizes as small as 35 nm. We demonstrate the ferroelectric field effect with a graphene/vdW stack on AlBN by creating a p−n junction. This resist-free, high-resolution, contactless patterning method offers a new pathway to integrate ferroelectric films with a wide range of two-dimensional layers including transition-metal dichalcogenides (TMD), enabling arbitrary programming and top-down creation of multifunctional devices.
Engineering superlattices (SLs)—which are spatially periodic potential landscapes for electrons—is an emerging approach for the realization of exotic properties, including superconductivity and correlated insulators, in two-dimensional materials. While moiré SL engineering has been a popular approach, nanopatterning is an attractive alternative offering control over the pattern and wavelength of the SL. However, the disorder arising in the system due to imperfect nanopatterning is seldom studied. Here, by creating a square lattice of nanoholes in the SiO2 dielectric layer using nanolithography, we study the SL potential and the disorder formed in hBN-graphene-hBN heterostructures. Specifically, we observe that while electrical transport shows distinct SL satellite peaks, the disorder of the device is significantly higher than graphene devices without any SL. We use finite-element simulations combined with a resistor network model to calculate the effects of this disorder on the transport properties of graphene. We consider three types of disorder: nanohole size variations, adjacent nanohole mergers, and nanohole vacancies. Comparing our experimental results with the model, we find that the disorder primarily originates from nanohole size variations rather than nanohole mergers in square SLs. We further confirm the validity of our model by comparing the results with quantum transport simulations. Our findings highlight the applicability of our simple framework to predict and engineer disorder in patterned SLs, specifically correlating variations in the resultant SL patterns to the observed disorder. Our combined experimental and theoretical results could serve as a valuable guide for optimizing nanofabrication processes to engineer disorder in nanopatterned SLs.
Among a huge variety of known two-dimensional materials, some of them have anisotropic crystal structures; examples include so different systems as a few-layer black phosphorus (phosphorene), beryllium nitride BeN$_4$, van der Waals magnet CrSBr, rhenium dichalcogenides ReX$_2$. As a consequence, their optical and electronic properties turn out to be highly anisotropic as well. In some cases, the anisotropy results not just in a smooth renormalization of observable properties in comparison with the isotropic case but in the appearance of dramatically new physics. The examples are hyperbolic plasmons and excitons, strongly anisotropic ordering of adatoms at the surface of two-dimensional or van der Waals materials, essential change of transport and superconducting properties. Here, we present a systematic review of electronic structure, transport and optical properties of several representative groups of anisotropic two-dimensional materials including semiconductors, anisotropic Dirac and semi-Dirac materials, as well as superconductors.
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