Transport features of topological corner states in honeycomb lattice with multihollow structure

Wang, Kaitong; Xu, Fuming; Wang, Bin; Yu, Yunjin; Wei, Yadong

doi:10.1007/s11467-021-1136-z

Cited by 7 publications

(2 citation statements)

References 68 publications

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“…These are twisted bilayer graphene [8], graphdiyne [9], breathing Kagome lattices [10], phosforene [11], and cubic semiconductor quantum wells [12]. Interestingly, SOTIs can be implemented by applying an in-plane Zeeman (or exchange) field to 2D TIs, for example produced by a magnetic substrate, as it was proposed in [13][14][15][16][17][18][19][20]. Although a substantial body of literature exists already on SOTIs in 2D, few papers have addressed their transport properties, see [13,[16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Topological nano-switches in higher-order topological insulators

Poata,

Taddei,

Michele Governale

2024

New J. Phys.

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We consider multi-terminal transport through a flake of rectangular shape of a two-dimensional topological insulator in the presence of an in-plane magnetic field. This system has been shown to be a second-order topological insulator, thus exhibiting corner states at its boundaries. The position of the corner states and their decay length can be controlled by the direction of the magnetic field. In the leads we assume that the magnetic field is absent and therefore we have helical one-dimensional propagating states characteristic of the spin-Hall effect. Using a low-energy effective Hamiltonian we show analytically that, in a two-terminal setup, transport can be turned on and off by a rotation of the in-plane magnetic field. Similarly, in a three terminal configuration, the in-plane magnetic field can be used to turn on and off the transmission between neighbouring contacts, thus realising a directional switch. Analytical calculations are supplemented by a numerical finite-difference method. For small values of the Fermi energy and field strength, the analytical results agree exceptionally well with the numerics. The effect of disorder is also addressed in the numerical approach. We find that the switching functionality is remarkably robust to the presence of strong disorder stemming from the topological nature of the states contributing to the electron transport.

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Section: Introductionmentioning

confidence: 99%

Topological nano-switches in higher-order topological insulators

Poata,

Taddei,

Michele Governale

2024

New J. Phys.

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“…Accordingly, we propose that quantum parametric pump can drive valley and spin polarized currents in monolayer MoS 2 through adiabatically varying two gate voltages. The parametric pump can produce dc current by periodically varying system parameters, which has been generalized to various 2D materials [52][53][54][55] . Specially, spin pump has been reported in several nanostructures [56][57][58] , where pure spin current and zero charge current are obtained.…”

Section: Introductionmentioning

confidence: 99%

Realization of valley-spin polarized current via parametric pump in monolayer MoS2

Wang

et al. 2023

New J. Phys.

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Monolayer MoS_2 is a typical valleytronic material with valley-spin locked valence bands. We numerically investigate the valley-spin polarized current in monolayer MoS_2 via adiabatic electron pumping. By introducing an exchange field to break the energy degeneracy of monolayer MoS_2, the top of its valence bands is valley-spin polarized and tunable by the exchange field. A device with spin-up polarized left lead, spin-down polarized right lead, and untuned central region is constructed through applying different exchange fields in the corresponding regions. Then, equal amount of pumped currents with opposite valley-spin polarization are simultaneously generated in the left and right leads when periodically varying two pumping potentials. Numerical results show that the phase difference between the pumping potentials can change the direction and hence polarization of the pumped currents. It is found that the pumped current exhibits resonant behavior in the valley-spin locked energy window, which depends strongly on the system size and is enhanced to resonant current peaks at certain system lengths. More importantly, the pumped current periodically oscillates as a function of the system length, which is closely related to the oscillation of transmission. The effects of other system parameters, such as the pumping amplitude and the static potential, are also thoroughly discussed.

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Bulk-boundary-transport correspondence of the second-order topological insulators

Long,

Wei,

et al. 2023

Sci. China Phys. Mech. Astron.

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Transport features of topological corner states in honeycomb lattice with multihollow structure

Cited by 7 publications

References 68 publications

Topological nano-switches in higher-order topological insulators

Topological nano-switches in higher-order topological insulators

Realization of valley-spin polarized current via parametric pump in monolayer MoS2

Bulk-boundary-transport correspondence of the second-order topological insulators

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