Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

Wu, Han; Чайка, А. Н.; Huang, Tsung Wei; Syrlybekov, Askar; Abid, Muhammad; Aristov, V. Yu.; Молодцова, О. В.; Babenkov, S.; Marchenko, D.; Sánchez-Barriga, J.; Mandal, Partha Sarathi; Varykhalov, A.; Niu, Yuran; Murphy, Barry E.; Krasnikov, Sergey A.; Lübben, Olaf; Wang, Jing Jing; Liu, Huajun; Li, Yang; Zhang, Hongzhou; Abid, Mohamed; Janabi, Yahya T.; Молотков, С. Н.; Chang, Ching‐Ray; Shvets, I. V.

doi:10.1021/acsnano.5b02877

Cited by 23 publications

(30 citation statements)

References 57 publications

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“…This is due to the four different preferential lattice orientations the graphene adopts, which are each rotated by ±13.5° relative to the two orthogonal [110] and [1-10] directions of the SiC crystal lattice. [9][10][11] As discussed in our previous studies, 20 this 27° rotation of graphene lattices in the neighboring nanodomains can be related to the formation of a periodic structure along the domain boundaries.…”

Section: Resultsmentioning

confidence: 51%

Layer-by-Layer Graphene Growth on β-SiC/Si(001)

et al. 2018

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The mechanism of few-layer graphene growth on the technologically-relevant cubic-SiC/Si(001) substrate is uncovered using high-resolution core-level and angle-resolved photoelectron spectroscopy, low-energy electron microscopy, and micro-spot low-energy electron diffraction. The thickness of the graphitic overlayer supported on the silicon carbide substrate and related changes in the surface structure are precisely controlled by monitoring the progress of the surface graphitization in-situ during high-temperature graphene synthesis, using a combination of microspectroscopic techniques. The experimental data reveal gradual changes in the preferential graphene lattice orientations at the initial stages of the few-layer graphene growth on SiC(001) and can act as reference data for controllable growth of single-, double-, and triple-layer graphene on silicon carbide substrates.

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Section: Resultsmentioning

confidence: 51%

Layer-by-Layer Graphene Growth on β-SiC/Si(001)

et al. 2018

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“…According to the theoretical calculations presented in Ref. [93], the observed ARPES dispersions may correspond to a quasi-free-standing Bernal-stacked ABAtrilayer graphene formed on β-SiC(001).…”

Section: Large-area Stm Images Of Sic(001)-c(2 × 2) (A) and Trilayer mentioning

confidence: 85%

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

Молодцова¹,

Чайка²,

Aristov³

2019

Silicon Materials

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Few-layer graphene exhibits exceptional properties that are of interest for fundamental research and technological applications. Nanostructured graphene with self-aligned domain boundaries and ripples is one of very promising materials because the boundaries can reflect electrons in a wide range of energies and host spinpolarized electronic states. In this chapter, we discuss the ultra-high vacuum synthesis of few-layer graphene on the technologically relevant semiconducting β-SiC/Si(001) wafers. Recent experimental results demonstrate the possibility of controlling the preferential domain boundary direction and the number of graphene layers in the few-layer graphene synthesized on the β-SiC/Si(001) substrates. Both these goals can be achieved utilizing vicinal silicon wafers with small miscuts from the (001) plane. This development may lead to fabricating new tunable electronic nanostructures made from graphene on β-SiC, opening up opportunities for new applications.

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“…Line defects in graphene can cause spin accumulation and affect transport behaviors adjacent to the defect lines ( Table 3 ). [ 180‐182 ] Wu et al. observed a positive magnetoresistance when electron transports across the nanoboundary.…”

Section: Induced Magnetism In Nonmagnetic 2d Materialsmentioning

confidence: 99%

Prospects and Opportunities of 2D van der Waals Magnetic Systems

et al. 2020

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The existence of spontaneous magnetization in low dimensional magnetic systems has attracted intensive studies since the early 60s and research remains very active even now. Only recently, magnetic van der Waals (vdW) systems down to a few layers have been broadly discussed for their magnetic order ground states at finite temperature. The naturally inherited layered structure of the vdW magnetic systems possessing onsite magnetic anisotropy from band electrons can suppress the long-range fluctuations. This provides an excellent vehicle to study the transition of magnetism to 2D limits both theoretically and experimentally. Here the current status of 2D vdW magnetic system and its potential applications are briefly summarized and discussed.

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Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

Cited by 23 publications

References 57 publications

Layer-by-Layer Graphene Growth on β-SiC/Si(001)

Layer-by-Layer Graphene Growth on β-SiC/Si(001)

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

Prospects and Opportunities of 2D van der Waals Magnetic Systems

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