Transport limitations and Schottky barrier height in titanium silicide nanowires grown on the Si(111) surface

Abstract

Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment

Scanning tunneling spectroscopy of cleaved InAs/GaAs quantum dots at low temperatures

“…Such a result is consistent with other STS studies, which are performed on semiconductor surfaces, where the band edges are shifted to higher energies at low temperature due to the transport limitations in the semiconductor. 24,25 Then, peaks appear in the energy range where the shoulder was seen at T = 77 K. When we compare the peak separations, we find that the energy separation between the two lowest electron states ͑80 meV͒ is quite comparable to the separation that is measured between some of these peaks, for example, between the second ͑+0.80 V͒ and third ͑+0.88 V͒ peaks or the third and fourth ͑+0.96 V͒ peaks.…”

Minority carrier effects in nanoscale Schottky contacts

“…Several groups have investigated the I -V behavior of metalsemiconductor point contacts, and have reported anomalous values for n and SB obtained by fitting the data to equation (1). This behavior has been variously attributed to tunneling or to ohmic conduction through surface states or to screening by a strongly pinned surface Fermi level adjacent to the contact [8][9][10][11][12].…”

Scanning Tunneling Microscopy and Spectroscopy of Semiconductor Materials

“…For example, deposition of cobalt or titanium onto a Si surface maintained at high temperatures leads to the formation of self-assembled silicide nanowires. In contrast, their length can reach several micrometers and allows the controlled positioning of multiple tips (see Figure 20(b)) to measure the conductivity of a single silicide nanowire (Okino et al, 2005;Soubiron et al, 2007;Yoshimoto et al, 2007). In contrast, their length can reach several micrometers and allows the controlled positioning of multiple tips (see Figure 20(b)) to measure the conductivity of a single silicide nanowire (Okino et al, 2005;Soubiron et al, 2007;Yoshimoto et al, 2007).…”