Transport masses in strained silicon MOSFETs with different channel orientations

On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs

“…atomistic) have been performed in strained nano-scaled field-effect transistors. Being an atomistic approach, the TB approach overcomes the EFA and allows to define atomic details, such as spin degeneracy removal in QW with odd numbers of atomic layers [37]. The drawback of the TB approach is the large number of parameters needed to accurately reproduce the overall bandstructure, specially in strained semiconductors.…”

“…We have compared the predictions of the present full-zone k.p-EFA to the TB ones and an excellent agreement was found in various 2D-systems. Extensive comparisons between these two models are in progress, and a series of results have been presented elsewhere; in FD MOSFETs [37], in Ge Quantum Well [30] and in Si/ SiGe heterostructures [40].…”