2010
DOI: 10.1016/j.tsf.2010.06.028
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Transport measurements on microcrystals of oriented CeIn3 and CeCoIn5 thin films

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Cited by 4 publications
(14 citation statements)
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“…Best results were obtained for a substrate temperature of 500°C, 40 W dc sputtering power at each CeIn 3 target and 350 W dc sputtering power of indium, and an argon gas pressure of 3 × 10 −2 mbar. Under these conditions the film growth rate was 30 Å/s, i.e., ∼30 times higher than of the MBE-prepared CeIn 3 films [6]. No post-deposition treatment was performed.…”
Section: Sample Preparation and Characterizationmentioning
confidence: 93%
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“…Best results were obtained for a substrate temperature of 500°C, 40 W dc sputtering power at each CeIn 3 target and 350 W dc sputtering power of indium, and an argon gas pressure of 3 × 10 −2 mbar. Under these conditions the film growth rate was 30 Å/s, i.e., ∼30 times higher than of the MBE-prepared CeIn 3 films [6]. No post-deposition treatment was performed.…”
Section: Sample Preparation and Characterizationmentioning
confidence: 93%
“…CeIn 3 thin films have become of increasing interest as well [5,6]. The recent report of a dimensional crossover of the heavy-fermion behavior in CeIn 3 /LaIn 3 superlattices as a function of thickness of CeIn 3 layers separated by LaIn 3 layers [7] has sparked this interest.…”
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confidence: 99%
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