Transport mechanism in granular Ni deposited on carbon nanotubes fibers

Salvato, M.; Lucci, M.; Ottaviani, I.; Cirillo, M.; Tamburri, Emanuela; Orlanducci, S.; Terranova, Maria Letizia; Notarianni, Marco; Young, Colin C.; Behabtu, Natnael; Pasquali, Matteo

doi:10.1103/physrevb.86.115117

Cited by 12 publications

(17 citation statements)

References 22 publications

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“…The possible range of observable behaviors is very broad and the following examples by no means exhaustive: granular metals can show the insulator-superconductor transition [3][4][5] due to an interplay of superconductivity and Coulomb blockade; or giant magnetoresistance effects appear in granular ferromagnets 6,7 because of the spin dependent tunneling of current carriers between grains; or the combination of ferroelectric and ferromagnetic materials allows to produce a strain mediated magnetoelectric coupling [8][9][10] .…”

Section: Introductionmentioning

confidence: 99%

Interplay of Coulomb blockade and ferroelectricity in nanosized granular materials

et al. 2014

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We study electron transport properties of composite ferroelectrics -materials consisting of metallic grains embedded in a ferroelectric matrix. In particular, we calculate the conductivity in a wide range of temperatures and electric fields, showing pronounced hysteretic behavior. In weak fields, electron cotunneling is the main transport mechanism. In this case, we show that the ferroelectric matrix strongly influences the transport properties through two effects: i) the dependence of the Coulomb gap on the dielectric permittivity of the ferroelectric matrix, which in turn is controlled by temperature and external field; and ii) the dependence of the tunneling matrix elements on the electric polarization of the ferroelectric matrix, which can be tuned by temperature and applied electric field as well. In the case of strong electric fields, the Coulomb gap is suppressed and only the second mechanism is important. Our results are important for i) thermometers for precise temperature measurements and ii) ferrroelectric memristors.

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Section: Introductionmentioning

confidence: 99%

Interplay of Coulomb blockade and ferroelectricity in nanosized granular materials

et al. 2014

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“…Actually, the concept of hopping between disorderinduced localized electronic states near the MIT is a universal feature of disordered Mott systems. In particular, it was successfully applied to describe transport in amorphous/nanocrystalline silicon hybrids [15], semiconductor nanocrystals [16], ruthenate [17], carbon nanotube fibers [18], as well as transport of single (few) donors in a silicon nanoscale transistor [19,20]. Known models of crossover between different types of VRH are characterized by two different approaches to the calculation of the exponent from (1).…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Conductivity inn-Type Noncompensated Silicon below Insulator-Metal Transition

Danilyuk¹,

Trafimenko²,

Федотов³

et al. 2017

Advances in Condensed Matter Physics

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We investigate the transport properties ofn-type noncompensated silicon below the insulator-metal transition by measuring the electrical and magnetoresistances as a function of temperatureTfor the interval 2–300 K. Experimental data are analyzed taking into account possible simple activation and hopping mechanisms of the conductivity in the presence of two impurity bands, the upper and lower Hubbard bands (UHB and LHB, resp.). We demonstrate that the charge transport develops with decreasing temperature from the band edge activation (110–300 K) to the simple activation with much less energy associated with the activation motion in the UHB (28–90 K). Then, the Mott-type variable range hopping (VRH) with spin dependent hops occurs (5–20 K). Finally, the VRH in the presence of the hard gap (HG) between LHB and UHB (2–4 K) takes place. We propose the empiric expression for the lowTdensity of states which involves both the UHB and LHB and takes into account the crossover from the HG regime to the Mott-type VRH with increasing temperature. This allows us to fit the lowTexperimental data with high accuracy.

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“…The conductivity for the anisotropic model can be obtained using the isotropic result by replacing β by 4β 1 in Eqs. (15) and (16). The solid (red) and dashed (green) lines correspond to a granular ferroelectric and a granular metal, respectively.…”

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confidence: 99%

“…Possible applications range from tunable capacitors to ferroelectric tunnel junctions showing giant electroresistance switching effects. Composite materials are described as solids consisting of normal metallic [11], superconducting [12][13][14], or ferromagnetic grains [15,16] embedded into a dielectric matrix. …”

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confidence: 99%

Electron transport properties of composite ferroelectrics

Udalov¹,

Glatz²,

Beloborodov³

2013

EPL

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PACS 72.15.-v -Electronic conduction in metals and alloys PACS 77.80.-e -Ferroelectricity and antiferroelectricity PACS 72.80.Tm -Composite materials Abstract -We study electron transport in composite ferroelectrics -materials consisting of metallic grains embedded in a ferroelectric matrix. Due to its complex tunable morphology the thermodynamic properties of these materials can be essentially different from bulk or thin-film ferroelectrics. We calculate the conductivity of composite ferroelectrics by taking into account the interplay between charge localization, multiple grain boundaries, strong Coulomb repulsion, and ferroelectric order parameter. We show that the ferroelectricity plays a crucial role on the temperature behavior of the conductivity in the vicinity of the ferroelectric-paraelectric transition.Introduction. -Great efforts in contemporary materials science research focus on properties of composite materials. The interest is motivated by the promise to create materials with unique electrical [1,2], magnetic [3,4], thermoelectric [5], optical [6][7][8] and elastic [9] properties. The ease of adjusting the electronic structure of composite materials is one of their most attractive assets for fundamental studies of disordered solids and for targeted applications in nanotechnology [10]. Possible applications range from tunable capacitors to ferroelectric tunnel junctions showing giant electroresistance switching effects. Composite materials are described as solids consisting of normal metallic [11], superconducting [12][13][14], or ferromagnetic grains [15,16] embedded into a dielectric matrix.

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Transport mechanism in granular Ni deposited on carbon nanotubes fibers

Cited by 12 publications

References 22 publications

Interplay of Coulomb blockade and ferroelectricity in nanosized granular materials

Interplay of Coulomb blockade and ferroelectricity in nanosized granular materials

Low Temperature Conductivity inn-Type Noncompensated Silicon below Insulator-Metal Transition

Electron transport properties of composite ferroelectrics

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