2021
DOI: 10.1039/d0cp06401g
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Transport mechanisms in Co-doped ZnO (ZCO) and H-irradiated ZCO polycrystalline thin films

Abstract: Co doping increases the ZnO resistivity (ρ) at high T (HT), whereas it has an opposite effect at low T (LT). H balances the Co effects by neutralizing the ρ increase at HT and strengthening its decrease at LT.

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Cited by 9 publications
(7 citation statements)
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References 69 publications
(105 reference statements)
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“…The activation energies and the features of the s curve closely resemble those found for the highly n-doped ZnO sample investigated in our previous study (bottom row in the table). 13 Thus, the same conclusions apply here: two different thermally activated processes govern the charge transport in the HT and LT regimes, respectively. The first one refers to an intra-grain conduction process which arises from mobile electrons in the CB, D-CB process.…”
Section: Zno Films With Different Carrier Densitiessupporting
confidence: 63%
See 3 more Smart Citations
“…The activation energies and the features of the s curve closely resemble those found for the highly n-doped ZnO sample investigated in our previous study (bottom row in the table). 13 Thus, the same conclusions apply here: two different thermally activated processes govern the charge transport in the HT and LT regimes, respectively. The first one refers to an intra-grain conduction process which arises from mobile electrons in the CB, D-CB process.…”
Section: Zno Films With Different Carrier Densitiessupporting
confidence: 63%
“…The shapes of the curves suggest the occurrence of different thermally activated processes in HT and LT regimes. A natural, first attempt for the investigation of the s behaviour in the whole temperature range has been performed by using the following equation: 13,22,23…”
Section: Zno Films With Different Carrier Densitiesmentioning
confidence: 99%
See 2 more Smart Citations
“…One possible explanation for the observed noise temperature dependence can be found in a theoretical model which ascribes the origin of resistance uctuations to vacancy and interstitial diffusion 22,31 , as already reported for granular and polycrystalline systems 32,33 . This nding gives an indication that above a certain Au layer thickness, here identi ed in 4.5 nm, the conducting regions forming the ultrathin lms are more uniformly distributed and interconnected, despite the possible presence of structural defects at the points of their closest distance.…”
Section: Resultsmentioning
confidence: 55%