Transport of Charge Carriers along Dislocations in Si and Ge

Abstract

Experimental observations and quantum mechanical device simulations point to different electronic properties of dislocations in silicon and germanium. The experimental data suggest a supermetallic behavior of the dislocations in Si and thus the high strain in the dislocation core is thought to cause the confinement of the charge carriers, which leads to the formation of a 1D electron gas along a dislocation (quantum wire). The resulting significant increase in the electron concentration corresponds to a marked increase in the drain current of metal–oxide–semiconductor field‐effect transistor (MOSFET). The specific resistance of an individual dislocation in Ge is about nine orders of magnitude higher than for a dislocation in Si. The experimental measurements of the strain in dislocation cores in Ge are still missing. Based on the band structure data, the generation of a strain equivalent to that of the dislocation cores in Si appears to be very challenging because of the transition from an indirect into a direct semiconductor with about tenfold lower strain levels. The lower strain in the dislocation core in germanium may not support the carrier confinement as proposed for the dislocation core of silicon, and consequently 1D electron gases are not expected to form along the dislocations in Ge.

Surface Examination of Structure Loss in N-Type Czochralski Silicon Ingots

“…To better study this phenomenon, we should first understand the mechanism and root causes of dislocation generation in the single silicon crystal, especially since growing dislocation-free Si ingots is entirely feasible as granted by Dash in 1958 [4]. The carrier lifetime, as well as mechanical stability of the silicon wafers, are dramatically affected by the existence of dislocations as has been reported by [5][6][7]. Due to the complexity of this process, many reasons can lead to structure loss.…”