Infrared-absorption measurements were used to characterize OH Ϫ and OD Ϫ stretching frequencies in Al 2 O 3 crystals both nominally pure and doped with either Ti, V, or Mg impurities. Impurities, cooling rates, and ultraviolet irradiation affect the distribution of various OH Ϫ (OD Ϫ ) band intensities. Polarization experiments determined the precise angle of OH Ϫ (OD Ϫ ) ions protruding from the basal plane for several OH Ϫ (OD Ϫ ) bands. Most were Ͻ15°, with one at 21°. Diffusion of isotopic species was performed with and without an electric field. Without an electric field, indiffusion is possible only by exchanging with an existing species. With an electric field, indiffusion occurs by exchange as well as occupying new sites. Incorporation of hydrogen ͑deuterium͒ was investigated by subjecting the crystals to a moderate electric field both parallel and perpendicular to the crystallographic c axis, in the temperature range 973-1300 K in H 2 O ͑or D 2 O) vapor. An initial linear dependence of the percent of exchange with annealing time and applied voltage was observed, indicating that ionic conduction is the dominant mechanism. The activation energy for the H ϩ ⇔D ϩ exchange was determined to be Ϸ2.4 eV with an electric field of 3000 V/cm applied either parallel or perpendicular to the c axis. The estimated proton ͑deuteron͒ mobility is ϭ(6Ϯ1)ϫ10 Ϫ8 cm 2 /(V s).