Transport phenomena in sublimation growth of SiC bulk crystals

Segal, A.S.; Vorob'ev, A. N.; Karpov, S. Yu.; Makarov, Yu.N.; Мохов, Е. Н.; Ramm, M.G.; Роенков, А. Д.; Vodakov, Yu. A.; Zhmakin, Alexander I.

doi:10.1016/s0921-5107(98)00441-3

Cited by 28 publications

(27 citation statements)

References 7 publications

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“…Since graphite is primarily used as a crucible wall material, the above reactive species chemically interact with the walls supplying additional material to the growth surface. To consider these chemical reactions, we have suggested an original model of the heterogeneous chemistry [12], where the total flux J i of the i-th species is related to its partial pressure P i at a reactive surface by the Hertz-Knudsen equation…”

Section: Heterogeneous Processes In Sic Sublimation Growthmentioning

confidence: 99%

Advances in modeling of wide‐bandgap bulk crystal growth

Богданов¹,

Demina²,

Karpov³

et al. 2003

Cryst. Res. Technol.

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. Pn, 81.05.Rm, 72.80.Ey We review key aspects of sublimation growth of wide-bandgap semiconductors like SiC, AlN and GaN, and show how modeling can help to solve a number of practical problems. As the temperature distribution in the growth chamber is the most critical factor in the sublimation technology, we discuss in detail specific features of heat transfer with the focus on the porous materials normally involved in the growth system: powder source, thermal insulation, and graphite. The species transport is simulated using advanced models accounting for a multicomponent vapor and the kinetics of chemical interaction of nitrogen-containing species with the surface of group-III nitrides. The effect of growth conditions on parasitic phase formation is analyzed. To optimize the growth system design and operating conditions, we suggest an inverse-problem approach instead of commonly used trial-and-error methods. This simulation procedure has proved quite efficient for getting design solutions, which could hardly be found by conventional straightforward methods. In particular, we demonstrate the effectiveness of the inverse modeling for finding the growth conditions, which provide crystals of desired shapes. A special analysis is made to establish a correlation between the growth conditions and defect distribution in the grown crystal, with the focus on thermoelastic stress produced by temperature gradients. The high-temperature dynamics of gliding dislocations and consequent plastic stress relaxation in the material is examined. The prospective of global modeling of wide-bandgap crystal growth by sublimation and still open questions are discussed.

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Section: Heterogeneous Processes In Sic Sublimation Growthmentioning

confidence: 99%

Advances in modeling of wide‐bandgap bulk crystal growth

Богданов¹,

Demina²,

Karpov³

et al. 2003

Cryst. Res. Technol.

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show abstract

“…4. The lefthand plot illustrates crystal shape evolution predicted by the model developed in this paper, whereas the right-hand plot presents the interface dynamics predicted by the quasi-thermodynamic approach which neglects the facet formation [7]. Development of the (0 0 0 1) face characterized by a ¼ 0 is clearly visible in the inset.…”

Section: Article In Pressmentioning

confidence: 97%

“…far from the singular orientation, the step density n step ðn step ¼ 1=lÞ is high. So the terrace width l is smaller than the diffusion length, diffusion is no longer a limiting mechanism, and the model can be reduced to the quasi-thermodynamic approach ignoring the surface diffusion, which is extensively used to model the PVT growth occurring under mass transport limited conditions [7]. The presented model can be easily generalized for other binary compounds grown from the vapor.…”

Section: Article In Pressmentioning

confidence: 99%

“…This makes modeling an important tool to examine the effects of the operating conditions and crucible design on the crystal shape evolution [6]. A key point of the growth simulation is prediction of the growth rate distribution along the crystallization front, relating the normal local growth rate V gr to the vapor composition at the surface and its temperature [7]. Until now, most approaches to the PVT growth modeling predict growth rate distribution ignoring the faceting phenomenon [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

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Modeling of facet formation in SiC bulk crystal growth

Matukov¹,

Kalinin²,

Богданов³

et al. 2004

Journal of Crystal Growth

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“…The latter was earlier applied to the modelling of other growth techniques (see, for example, (Segal et al, 2004) and references therein). As applied to AlN sublimation growth, it utilizes the extended Hertz-Knudsen relationships (Segal et al, 1999) for two reactive gaseous species, Al and N 2 Here, J i are the interface molar fluxes, α i (T) are the temperature-dependent sticking probabilities,…”

Section: Boundary Conditionsmentioning

confidence: 99%