Transport phenomena of crystal growth—heat and mass transfer

Rudolph, P.; Wang, W.; Tsukamoto, Katsuo; Wu, Di

doi:10.1063/1.3476222

Cited by 15 publications

(14 citation statements)

References 6 publications

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“…Therefore, Figure 21.14 is not universally representative of these thicknesses [44]. Therefore, Figure 21.14 is not universally representative of these thicknesses [44].…”

Section: Boundary Layermentioning

confidence: 99%

Fluid Dynamics

Kakimoto

Gao

2015

Handbook of Crystal Growth

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“…Therefore, Figure 21.14 is not universally representative of these thicknesses [44]. Therefore, Figure 21.14 is not universally representative of these thicknesses [44].…”

Section: Boundary Layermentioning

confidence: 99%

Fluid Dynamics

Kakimoto

Gao

2015

Handbook of Crystal Growth

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“…It is a well-known fact that the quality of bulk, semiconducting single crystals usually produced by unidirectional solidification from the melt depends strongly on the melt flow during growth (for a recent review see [1]). For example, dopant segregation and thermal stress on solidification are directly linked to the convective mass and heat transport in the melt, and their prediction and control is still one of the major challenges in crystal growth.…”

Section: Introductionmentioning

confidence: 99%

“…Electro-magnetic flow control using time-dependent magnetic fields has been widely recognised as a versatile, efficient method of tailoring the melt flow including thermal field and dopant concentration [1]. Among magnetic fields, the rotating magnetic field (RMF) is probably one of the best-investigated types.…”

Section: Introductionmentioning

confidence: 99%

A fixed-grid method for transient simulations of dopant segregation in VGF-RMF growth

Nikrityuk

Pätzold

Stelter

2012

Journal of Crystal Growth

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“…It includes thermal conduction, convection, radiation, phase change, and transport of different impurities [3,4]. These transport characteristics can influence the crystal growth of silicon ingots significantly [5]. To control the heat and mass transport and optimize the crystal growth, the component materials in the DS furnace are carefully chosen.…”

Section: Introductionmentioning

confidence: 99%

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Liu

Zhang

et al. 2016

International Journal of Photoenergy

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We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS) process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.

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Transport phenomena of crystal growth—heat and mass transfer

Cited by 15 publications

References 6 publications

Fluid Dynamics

Fluid Dynamics

A fixed-grid method for transient simulations of dopant segregation in VGF-RMF growth

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

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