Transport properties and band structure of non-stoichiometric Cu2−xTe

Characterization of CdTe thin films fabricated by close spaced sublimation technique and a study of Cu doping by ion exchange process

“…The high carrier concentration for sample 15 h was due to Cu 2 Te compound formation. Our results regarding carrier concentration are similar to the earlier report [27]. It has been observed by Hall measurements that p-type doping is achieved in Cu-treated CdTe films prepared by this technique.…”

Enhancing Thermoelectric Power Factor of Cu<SUB>2–</SUB><SUB><I>x</I></SUB>Te Nanowires with Isoelectronic Se Doping

“…After reaching a peak the conductivity decreases with increase in temperature from 4. the Se-doped films exhibit semiconductor behavior over a broad range of temperatures up to 563 K due to the phase transition. 27 The Cu 2−x Te sample also shows metallic character because of its first phase transition above temperature 595 K. 24 These results also reveal that the Cu 2−x Te phase transition temperature decreases after being doped with Se and phase transition might be favorable for improving thermoelectric properties.…”

Multiphase thermoelectrics : effect of second phase in ex-SITU Cu7Te4-Bi0.4Sb1.6Te3 and in-SITU SnTe-SnSe nanocomposites

“…Copper telluride is reported to be a TE material with measured operation temperature up to 900 K [95][96][97], but there are not many reports on its TE performance. Literature data on bulk copper telluride shows that it has high electrical conductivity and relatively low Seebeck coefficient in the range of tens of µV/K [96][97][98]. Usually denoted as Cu 2 Te, copper telluride is better represented in the form Cu 2-x Te as it has a homogeneity range of 33.3 atomic % -37.5 atomic % Te [96] (i.e.…”

“…0 ≤ x ≤ 0.25). This is because Cu vacancies randomly occur as defects, resulting in the slight variation in composition [98].…”

“…In this work, the composition of focus is Cu 7 Te 4 , due to the achievable composition from wet chemical synthesis. Cu 7 Te 4 crystallizes in a hexagonal P3m1 structure, as seen in Figure 2.15, and has both direct and indirect band gap [98], and is known to have metallic conductivity [105]. In this work, the BST alloy is obtained directly from Industrial Technology Research Institute (Taiwan).…”