Transport properties of carriers in GaAs obtained using the photoacoustic method with the transmission detection configuration

Abstract

Electron transport properties of single-crystal GaAs were determined using the photoacoustic method with the transmission detection configuration. The excess-carrier lifetime, the front and the rear recombination velocity, and the coefficients of the carrier diffusion and the thermal diffusivity were determined by comparing experimental results and theoretical photoacoustic signals.

Nondestructive Photoacoustic Measurement of Doping Densities in Bulk GaAs

“…Therefore, the PA signal has a frequency dependence based on these nonradiative recombination processes, which is theoretically described in detail. [12][13][14][15][17][18][19][20][21][22][23] According to the thermal diffusion model, the pressure variation in the open PA cell for the thermally thick sample is given by 13,15,22,23)…”

Photoacoustic studies on <bold>n</bold>-type InP

“…Though in many reports the amplitude behavior is used to evaluate the thermal diffusivity of solid disklike samples, the necessary condition for employing this approach is that the detector ͑mi-crophone͒ should have flat response over the frequency range of interest. Otherwise, complicated normalization procedures are required as reported by Nikolic et al 9 However, the nonflat response of the microphone will not affect the phase data and hence it seems to be a simpler and more reliable strategy. But, a major drawback of the phase method is that the phase plot will not obey a linear relationship, as predicted by Eq.…”

“…19 Note also that in many OPC studies involving a variety of semiconductors, more complex phase behavior with a minimum in the phase plot is reported. [9][10][11][12][13][14][15][16][17] This nonlinear behavior of the phase data is attributed to surface and bulk recombination processes of photogenerated carriers in those materials. However, our observation indicates that for this sample, the photogenerated excess carrier recombination processes do not contribute to the PA signal in any significant manner in the frequency range of our investigations.…”

“…The Dramicanin model is very useful for the analysis of PA signal amplitude and phase at the front and rear surfaces of semiconductor samples. Subsequently, in more recent years, using PA phase measurements in the heat transmission configuration, carrier transport properties such as carrier diffusion coefficient, carrier recombination velocity, and mean recombination time were evaluated together with the thermal diffusivity of a large number of semiconducting samples, [9][10][11][12][13][14][15][16][17] namely, GaAs, CdTe, Si solar cells, CdInGaS 4 , InSb, GaSb, etc.…”

Thermal diffusivity measurement of solid materials by the pulsed photothermal displacement technique

“…Therefore, we quote the measured value of thermal diffusivity for our sample of semi-insulating GaAs as 0.29Ϯ0.015 cm 2 /s, This value is in good agreement with the values available in the literature. 8,[27][28][29][34][35][36][37] There are a range of values in the literature, from 0.21 to 0.52 cm 2 /s, although most of measurements give values in the range of 0.25-0.26 cm 2 /s for n-type GaAs. Some of the variation may be due to different carrier concentrations in different samples.…”