Transport properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type metalorganic chemical-vapor-deposited<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo

Bhattacharya, P.; Das, Utpal; Ludowise, M. J.

doi:10.1103/physrevb.29.6623

Cited by 24 publications

(12 citation statements)

References 29 publications

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“…Earlier studies indicate that acoustic phonon scattering is not significant in the determination of electron mobility in bulk Ga 1− Al As [7,[11][12][13][14].…”

Section: Acoustic Phonon Scatteringmentioning

confidence: 97%

“…The temperature dependence of the mobility (µ A ) limited by alloy-disorder scattering can be expressed as [7,13] …”

Section: Alloy-disorder Scatteringmentioning

confidence: 99%

“…However, it has been shown that alloy-disorder scattering does not play an important role in the determination of electron mobility in Ga 1− Al As ( <0.32) alloys [7,8,13,19]. …”

Section: Alloy-disorder Scatteringmentioning

confidence: 99%

“…As the applied electric field becomes higher than a critical value, hot electrons scatter from the Γ valley into the L (and X ) valleys. Within the framework of a threevalley, conduction band model, the Hall mobility (µ H ) is given by [11,13,18] µ H = µ…”

Section: Intervalley Scatteringmentioning

confidence: 99%

“…(For p-type and n-type doped materials, N can be taken equal to N A and N D , respectively). Several experimental studies published in the literature show that ionized impurity scattering is effective in bulk Ga 1− Al As alloys at low temperature [7,[11][12][13][14].…”

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confidence: 99%

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Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures containing quantum wells

2008

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The mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures was investigated using geometric magnetoresistance measurements in the dark. The samples studied had Ga1−y AlyAs (0 ≤ y ≤ 0:26) linearly graded barriers between the n+-GaAs contacts and the Ga0:74Al0:26As central barrier, which contain N w (=0, 2, 4, 7 and 10) n-doped GaAs quantum wells. The mobility was determined as functions of (i) temperature (80–290 K) at low applied voltage (0.01–0.1 V) and (ii) applied voltage (0.005–1.6 V) at selected temperatures in the range 3.5–290 K. The experimental results for the temperature dependence of low-field mobility suggest that space-charge scattering is dominant in the samples with N w=0 and 2, whereas ionized impurity scattering is dominant in the samples with N w=4, 7 and 10. The effect of polar optical phonon scattering on the mobility becomes significant in all barrier structures at temperatures above about 200 K. The difference between the measured mobility and the calculated total mobility in the samples with N w=4, 7 and 10, observed above 200 K, is attributed to the reflection of electrons from well-barrier interfaces in the quantum wells and interface roughness scattering. The rapid decrease of mobility with applied voltage at high voltages is explained by intervalley scattering of hot electrons.

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“…Earlier studies indicate that acoustic phonon scattering is not significant in the determination of electron mobility in bulk Ga 1− Al As [7,[11][12][13][14].…”

Section: Acoustic Phonon Scatteringmentioning

confidence: 97%

“…The temperature dependence of the mobility (µ A ) limited by alloy-disorder scattering can be expressed as [7,13] …”

Section: Alloy-disorder Scatteringmentioning

confidence: 99%

“…However, it has been shown that alloy-disorder scattering does not play an important role in the determination of electron mobility in Ga 1− Al As ( <0.32) alloys [7,8,13,19]. …”

Section: Alloy-disorder Scatteringmentioning

confidence: 99%

Section: Intervalley Scatteringmentioning

confidence: 99%

mentioning

confidence: 99%

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Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures containing quantum wells

2008

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Carrier Transport Properties

Adachi

2009

Properties of Semiconductor Alloys

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A search for resonant states from deep levels in GaAs and AlGaAs: Evidence from hall effect studies under pressure

Saxena

Singh

1996

Physica Status Solidi (b)

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Hall effect studies have been made on LPE grown n-type GaAlAs (0 5 17: 5 0.78) as a function of pressure and temperature. It has been shown that a resonant state lies 0.205 eV above the r edge in GaAs and becomes degenerate with it at z = 0.29. For x > 0.29, the same state appears in the band gap a? a deep level. The resonant state has a pressurc coefficient of (1.0 & 0.2) rneV/1O8 P a which gradually changes sign at z N 0.5 and has a value of -1.5 meV/lOs P a for z 2 0.78. A deep level emerges in GaAs under pressure which has properties similar to the DX level in GaAIAs. A reduction in mobility has also been observed due to resonant scattering. A shallow state strongly coupled to r also exists in the alloy. The results suggest that the origin of the DX level is an intrinsic crystal defcct (other than As vacancy) possibly coupled with an inadvertant substitutional Si impurity.

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Transport properties ofn-type metalorganic chemical-vapor-depositedAlxGa1−

Cited by 24 publications

References 29 publications

Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures containing quantum wells

Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures containing quantum wells

Carrier Transport Properties

A search for resonant states from deep levels in GaAs and AlGaAs: Evidence from hall effect studies under pressure

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