Transport properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Nd</mml:mi><mml:mn>1.2</mml:mn></mml:msub><mml:msub><mml:mi>Ba</mml:mi><mml:mn>1.8</mml:mn></mml:msub><mml:msub><mml:mi>Cu</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mi>Z</mml:mi></mml:msub></mml:math>ultrathin films by field-effect doping

Salluzzo, M.; Cassinese, A.; Luca, G. M. De; Gambardella, Alessandro; Prigiobbo, A.; Vaglio, R.

doi:10.1103/physrevb.70.214528

Cited by 19 publications

(13 citation statements)

References 26 publications

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“…On the other hand, the complex vortex dynamics, poor flux pinning and weak intergrain links are major limiting factors. Substitutions like oxides [11][12][13], nanoparticles and carbon nanotubes (CNT) [14,15] and metals [16][17][18][19][20][21] in cuprates have enhanced their prospectus for promising applications. It is found that Y in Y-123 system could be replaced by almost all the rare earth (RE) (Gd, Ho, Nb etc) elements [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

“…Substitutions like oxides [11][12][13], nanoparticles and carbon nanotubes (CNT) [14,15] and metals [16][17][18][19][20][21] in cuprates have enhanced their prospectus for promising applications. It is found that Y in Y-123 system could be replaced by almost all the rare earth (RE) (Gd, Ho, Nb etc) elements [16][17][18]. Doping of Gd [16], Ho [17], Nb [18] and composites with NiO [11], graphene [14], Au [19], graphene oxide [22] have resulted in the enhancement of flux pinning.…”

Section: Introductionmentioning

confidence: 99%

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The effect of Ni doping on the electrical and magnetic properties of Y_1-xNi_xBa₂Cu₃O_7−δ delta superconductors

Hadi-Sichani

Shakeripour

Salamati

2020

Mater. Res. Express

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The Y 1-x Ni x Ba 2 Cu 3 O 7-δ superconducting samples with low level of Ni concentration were prepared by the standard solid-state reaction. The AC susceptibility, magnetoresistivity, microstructure and the critical current density, J c , of samples as a function of temperature, magnetic field and Ni doping are investigated. The AC susceptibility measurements show that the displacement of the peak temperature T p of the imaginary part of the susceptibility χ″ versus magnetic field was reduced strongly by Ni doping up to an optimum level, which shows the increasing of flux pinning by Ni doping. The J c of samples was derived from AC susceptibility utilizing the Bean model. It shows an increasing in J c by Ni doping, at any temperature or magnetic field, consistent with the results of J c measurements. The magnetoresistance measurements were carried out under magnetic fields up to 1 T and explained by TAFC model. Utilizing this model, the vortex dynamic behaviour and the activation energy U (H) of the compound are investigated. We found that the U (H) increases and the resistive broadening is strongly reduced by Ni doping. The SEM measurements show that the grain sizes are clearly increased and the grain connections are improved by Ni doping. The results of all the observations taken from different measurements are consistent together and indicate the Ni doping has an effective role to improve the intergranular coupling and flux pinning.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The effect of Ni doping on the electrical and magnetic properties of Y_1-xNi_xBa₂Cu₃O_7−δ delta superconductors

Hadi-Sichani

Shakeripour

Salamati

2020

Mater. Res. Express

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“…The localization length increases as long as the negative gate voltage increases, i.e. by injecting holes in the sample [6].…”

Section: A Device Preparation and R(t) Measurementsmentioning

confidence: 99%

“…NdBCO films are superconductors as long as their thickness is greater than 10 u.c., whereas thinner samples show an insulating behavior following the Variable Range Hopping (VRH) Mott-2D model, described by the equation [6]:…”

Section: A Device Preparation and R(t) Measurementsmentioning

confidence: 99%

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Electrostatic Modulation of Conductivity in<tex>$rm Nd_1.2rm Ba_1.8rm Cu_3rm O_rm y$</tex>Thin Films

Cassinese

Luca

Gambardella

et al. 2005

IEEE Trans. Appl. Supercond.

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HTS properties can be modified by changing the carrier number n h per CuO 2 plane. The astonishing generality of the HTS phase diagram (temperature vs. number of holes), poses many questions concerning the fundamental aspects of the physics of such materials and, at the same time, offers an interesting instrument for the control of their transport properties and for the realization of new devices. Using field effect devices, we have modified the number of carriers in the surface layers of Nd 1 2 Ba 1 8 Cu 3 O 7 epitaxial films, grown on SrTiO 3 substrate, having thickness ranging between 4 and 10 unit cells (u.c.). The films investigate below 9 u.c. present a Variable Range Hopping Mott-insulator temperature dependence of the resistivity analogous to other insulators belonging to the families of strongly correlated systems. The gate can be applied both on the top layer through an Al 2 O 3 layer (gate up configuration) or by applying the electrical field on the back side of the SrTiO 3 substrate (gate down configuration). The devices are fabricated by a completely in situ technique, avoiding superface and inter-layers impurities. Here we report on the I-V characteristics and on resistive measurements obtained mainly with gate down configuration on insulating samples. Particular interest was devoted to the understanding of the maximum modulation achievable in this compound as well. Considerations on superconducting samples (10 u.c.) are also reported as well as on the possibility on the possibilities of superconductor-insulator transitions.Index Terms-Field effect, hole density, HTS, resistivity.

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Field Effect Devices Based on SrTiO₃ Gate Dielectrics for the Investigation of Charge Carrier Mobility in Macromolecular Films

Cassinese

Barra

Biasiucci

et al. 2006

Macromolecular Symposia

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Field effect devices (FET) allow an exhaustive investigation of the electronic transport properties of innovative semiconductors of interest for new applications in modern electronics. In this contribution, we report on the fabrication and characterization of FET devices where SrTiO3 (STO) single crystals and organic macromolecular compounds, such as doped and undoped polythiophenes, or poly(N‐vinylcarbazole) (PVK), are used as insulating and semiconducting layers, respectively. STO, with εr of about 300, offers the possibility to strongly modulate the charge carrier density in the organic films, thus overcoming the limitations related to the use of more conventional oxides.

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Transport properties ofNd1.2Ba1.8Cu3OZultrathin films by field-effect doping

Cited by 19 publications

References 26 publications

The effect of Ni doping on the electrical and magnetic properties of Y_1-xNi_xBa₂Cu₃O_7−δ delta superconductors

The effect of Ni doping on the electrical and magnetic properties of Y_1-xNi_xBa₂Cu₃O_7−δ delta superconductors

Electrostatic Modulation of Conductivity in<tex>$rm Nd_1.2rm Ba_1.8rm Cu_3rm O_rm y$</tex>Thin Films

Field Effect Devices Based on SrTiO₃ Gate Dielectrics for the Investigation of Charge Carrier Mobility in Macromolecular Films

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Transport properties ofNd1.2Ba1.8Cu3OZultrathin films by field-effect doping

Cited by 19 publications

References 26 publications

The effect of Ni doping on the electrical and magnetic properties of Y1-xNixBa2Cu3O7−δ delta superconductors

The effect of Ni doping on the electrical and magnetic properties of Y1-xNixBa2Cu3O7−δ delta superconductors

Electrostatic Modulation of Conductivity in&lt;tex&gt;$rm Nd_1.2rm Ba_1.8rm Cu_3rm O_rm y$&lt;/tex&gt;Thin Films

Field Effect Devices Based on SrTiO3 Gate Dielectrics for the Investigation of Charge Carrier Mobility in Macromolecular Films

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The effect of Ni doping on the electrical and magnetic properties of Y_1-xNi_xBa₂Cu₃O_7−δ delta superconductors

The effect of Ni doping on the electrical and magnetic properties of Y_1-xNi_xBa₂Cu₃O_7−δ delta superconductors

Electrostatic Modulation of Conductivity in<tex>$rm Nd_1.2rm Ba_1.8rm Cu_3rm O_rm y$</tex>Thin Films

Field Effect Devices Based on SrTiO₃ Gate Dielectrics for the Investigation of Charge Carrier Mobility in Macromolecular Films