Transport properties of pure and doped<i>M</i>NiSn (<i>M</i>=Zr, Hf)

Uher, Ctirad; Yang, Jiong; Hu, Siqing; Morelli, Donald T.; Meisner, G. P.

doi:10.1103/physrevb.59.8615

Cited by 605 publications

(428 citation statements)

References 7 publications

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“…However, on account of the relative high κ, the ZT values of the half-Heusler compounds are still much lower than those of the state-of-the-art TE materials. As there are three sublattice positions in a half-Heusler compound, isoelectronic alloying on diff erent sublattice positions is the most common approach to reducing κ. Uher et al [70] found that the isoelectronic alloying of Zr 0.5 Hf 0.5 NiSn produced a higher ZT value than that of either ZrNiSn or HfNiSn alone due to a reduction in thermal conductivity. Shen et al [71] investigated the eff ect of partial substitution of nickel with palladium on the TE properties of ZrNiSn-based half-Heusler compounds.…”

Section: Review Articlementioning

confidence: 99%

“…Compared with the PbTe or LAST systems, half-Heusler compounds are more environmentally benign and hence have attracted increasing levels of interest [70][71][72][73][74]. Half-Heusler compounds are crystallized in the MgAgAs-type structure with space group F4 ‾3m, which can be regarded as two interpenetrating cubic face-centered-cubic …”

Section: Half-heusler Compoundsmentioning

confidence: 99%

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High-performance nanostructured thermoelectric materials

et al. 2010

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T he conversion of thermal energy to electrical energy is known as thermoelectric (TE) conversion. Th e TE eff ect can be used for both power generation and electronic refrigeration. When a temperature gradient (ΔT ) is applied to a TE couple consisting of n-type (electron-transporting) and p-type (hole-transporting) elements, the mobile charge carriers at the hot end tend to diff use to the cold end, producing an electrostatic potential (ΔV ). Th is characteristic, known as the Seebeck eff ect, where α = ΔV/ΔT is defi ned as the Seebeck coeffi cient, is the basis of TE power generation, as shown in Figure 1(a). Conversely, when a voltage is applied to a TE couple, the carriers attempt to return to the electron equilibrium that existed before the current was applied by absorbing energy at one connector and releasing it at the other, an eff ect known as the Peltier eff ect, as shown in Figure 1(b). Th ermoelectric technology and solid-state devices based on the TE eff ect have a number of advantages, including having no moving parts, and being reliable and scalable. Th e technology has therefore arouse worldwide interest in many fi elds, including waste heat recovery and solar heat utilization (power generation mode), and temperature-controlled seats, portable picnic coolers and thermal management in microprocessors (active refrigeration mode) [1].Th e effi ciency of TE devices is strongly associated with the dimensionless fi gure of merit (ZT) of TE materials, defi ned as ZT = (α 2 σ/κ)T, where σ, κ and T are the electrical resistivity, thermal conductivity and absolute temperature [2]. High electrical conductivity (corresponding to low Joule heating), a large Seebeck coeffi cient (corresponding to large potential diff erence) and low thermal conductivity (corresponding to a large temperature diff erence) are therefore necessary in order to realize high-performance TE materials. Th e ZT fi gure is also a very convenient indictor for evaluating the potential effi ciency of TE devices. In general, good TE materials have a ZT value of close to unity. However, ZT values of up to three are considered to be essential for TE energy converters that can compete on effi ciency with mechanical power generation and active refrigeration.High-performance TE materials have been pursued since Bi 2 Te 3 -based alloys were discovered in the 1960s. Until the end of last century, moderate progress had been made in the development of TE materials. Th e benchmark of ZT ≈ 1 was broken in the mid-1990s by two Tsinghua University, China Thermoelectric eff ects enable direct conversion between thermal and electrical energy and provide an alternative route for power generation and refrigeration. Over the past ten years, the exploration of high-performance thermoelectric materials has attracted great attention from both an academic research perspective and with a view to industrial applications. This review summarizes the progress that has been made in recent years in developing thermoelectric materials with a high dimensionless fi gure of...

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Section: Review Articlementioning

confidence: 99%

Section: Half-heusler Compoundsmentioning

confidence: 99%

High-performance nanostructured thermoelectric materials

et al. 2010

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“…The combination of large Seebeck coefficients with moderately low electrical resistivities and thermal conductivity in these materials has stimulated the quest for high dimensional figure of merit (ZT) [7][8][9][10]. ZT is defined as ZT=(S 2 /)T, where S, , and  are Seebeck coefficient, electrical conductivity, and thermal conductivity, respectively.…”

mentioning

confidence: 99%

Half-Heusler Alloys for Efficient Thermoelectric Power Conversion

Chen

Zeng

Tritt

et al. 2016

Journal of Elec Materi

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Half-Heusler (HH) phases (space group F43m, Cl b ) are increasingly gaining attention as promising thermoelectric materials in view of their thermal stability and environmental benignity as well as efficient power output. Until recently, the verifiable dimensionless figure of merit (ZT) of HH phases has remained moderate near 1, which limits the power conversion efficiency of these materials. We report herein ZT~1.3 in n-type (Hf,Zr)NiSn alloys near 850 K developed through elemental substitution and simultaneously embedment of nanoparticles in the HH matrix, obtained by annealing the samples close to their melting temperatures. Introduction of mass fluctuation and scattering centers play a key role in the high ZT measured, as shown by the reduction of thermal conductivity and increase of thermopower. Based on computation, the power conversion efficiency of a n-p couple module based on the new n-type (Hf,Zr,Ti)NiSn particles-in-matrix composite and recently reported high-ZT p-type HH phases is expected to reach 13%, comparable to that of state-of-the-art materials, but with the mentioned additional materials and environmental attributes. Since the high efficiency is obtained without tuning the microstructure of the HalfHeusler phases, it leaves room for further optimization.

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“…The weak temperature dependence of resistivity has also been observed in bulk YPtSb and other half-Heusler semiconductors [16], a trend markedly different from that in the case of conventional semiconductor materials such as Si. [10,[17][18][19] As seen in Fig. 3(a) the resistivity increased from 500 • C deposition temperature to 700 • C, mainly because of the decreasing carrier density with an increase in deposition temperature ( Fig.…”

Section: Resultsmentioning

confidence: 88%

Fabrication and characterization of semiconducting half‐Heusler YPtSb thin films

Shan

Vilanova

Qin

et al. 2012

Physica Rapid Research Ltrs

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The semiconducting half-Heusler compound YPtSb has been predicted to convert into a topological insulator under the application of an appropriate degree of strain. In this study, p-type semiconducting YPtSb thin films were prepared by magnetron co-sputtering, using a specially designed target. YPtSb thin films grown on MgO (100) substrates at 600 • C showed a textured structure with the (111) plane parallel to the (001) plane of MgO. Electrical measurements showed that the resistivity of the YPtSb films decreases with increasing temperature, indicating semiconductor-like behavior. The carrier density was as high as 1.15×10 21 cm −3 at 300 K. The band gap of the YPtSb thin films was around 0.1-0.15 eV, which was in good agreement with the theoretical prediction and the value measured for bulk YPtSb.PACS numbers:

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Transport properties of pure and dopedMNiSn (M=Zr, Hf)

Cited by 605 publications

References 7 publications

High-performance nanostructured thermoelectric materials

High-performance nanostructured thermoelectric materials

Half-Heusler Alloys for Efficient Thermoelectric Power Conversion

Fabrication and characterization of semiconducting half‐Heusler YPtSb thin films

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